Fine line lithography using ion beams

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The characteristics of resist-ion interactions are reviewed and the influence of such interactions on the properties of conventional ion beam lithography discussed. Ion beam exposure profiles in polymethyl methacrylate (PMMA) using protons and doubly charged silicon ions are presented and shown to verify the attributes of ion beam lithography. It is also demonstrated that ion beam lithography can be used to fabricate lines as small as 30 nm in dimension. The application of ion beam lithography to the fabrication of submicrometer-gate GaAs FETs is discussed and the results of fabricated devices presented.

Original languageEnglish
Pages (from-to)923-928
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume7-8
Issue numberPART 2
DOIs
Publication statusPublished - 1985
Externally publishedYes

Fingerprint

Ion beam lithography
lithography
ion beams
Ions
Polymethyl Methacrylate
Silicon
Field effect transistors
Polymethyl methacrylates
Ion beams
Protons
polymethyl methacrylate
ions
Fabrication
field effect transistors
interactions
fabrication
protons
silicon
profiles

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "The characteristics of resist-ion interactions are reviewed and the influence of such interactions on the properties of conventional ion beam lithography discussed. Ion beam exposure profiles in polymethyl methacrylate (PMMA) using protons and doubly charged silicon ions are presented and shown to verify the attributes of ion beam lithography. It is also demonstrated that ion beam lithography can be used to fabricate lines as small as 30 nm in dimension. The application of ion beam lithography to the fabrication of submicrometer-gate GaAs FETs is discussed and the results of fabricated devices presented.",
author = "Ilesanmi Adesida",
year = "1985",
doi = "10.1016/0168-583X(85)90496-3",
language = "English",
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journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
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T1 - Fine line lithography using ion beams

AU - Adesida, Ilesanmi

PY - 1985

Y1 - 1985

N2 - The characteristics of resist-ion interactions are reviewed and the influence of such interactions on the properties of conventional ion beam lithography discussed. Ion beam exposure profiles in polymethyl methacrylate (PMMA) using protons and doubly charged silicon ions are presented and shown to verify the attributes of ion beam lithography. It is also demonstrated that ion beam lithography can be used to fabricate lines as small as 30 nm in dimension. The application of ion beam lithography to the fabrication of submicrometer-gate GaAs FETs is discussed and the results of fabricated devices presented.

AB - The characteristics of resist-ion interactions are reviewed and the influence of such interactions on the properties of conventional ion beam lithography discussed. Ion beam exposure profiles in polymethyl methacrylate (PMMA) using protons and doubly charged silicon ions are presented and shown to verify the attributes of ion beam lithography. It is also demonstrated that ion beam lithography can be used to fabricate lines as small as 30 nm in dimension. The application of ion beam lithography to the fabrication of submicrometer-gate GaAs FETs is discussed and the results of fabricated devices presented.

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DO - 10.1016/0168-583X(85)90496-3

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - PART 2

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