Abstract
The dynamics of hydrogen desorption from H-terminated silicon surface clusters has been simulated in the framework of real space time-dependent density functional theory complemented with molecular dynamics for ions. It has been demonstrated that by choosing an appropriate frequency and intensity of the laser it is possible to remove the hydrogen layer from the surface without destroying the structure of underlying silicon. At the laser field intensities used in the current study (0.5-2.0 V/Å) the desorption process is notably nonlinear.
Original language | English |
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Article number | 154101 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 15 |
DOIs | |
Publication status | Published - Apr 11 2011 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)