Frequency entrainment in optically injected semiconductor lasers

P. M. Varangis, A. Gavrielides, T. Erneux, V. Kovanis, L. F. Lester

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.

Original languageEnglish
Pages (from-to)2353-2356
Number of pages4
JournalPhysical Review Letters
Volume78
Issue number12
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

entrainment
semiconductor lasers
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Varangis, P. M., Gavrielides, A., Erneux, T., Kovanis, V., & Lester, L. F. (1997). Frequency entrainment in optically injected semiconductor lasers. Physical Review Letters, 78(12), 2353-2356.

Frequency entrainment in optically injected semiconductor lasers. / Varangis, P. M.; Gavrielides, A.; Erneux, T.; Kovanis, V.; Lester, L. F.

In: Physical Review Letters, Vol. 78, No. 12, 1997, p. 2353-2356.

Research output: Contribution to journalArticle

Varangis, PM, Gavrielides, A, Erneux, T, Kovanis, V & Lester, LF 1997, 'Frequency entrainment in optically injected semiconductor lasers', Physical Review Letters, vol. 78, no. 12, pp. 2353-2356.
Varangis PM, Gavrielides A, Erneux T, Kovanis V, Lester LF. Frequency entrainment in optically injected semiconductor lasers. Physical Review Letters. 1997;78(12):2353-2356.
Varangis, P. M. ; Gavrielides, A. ; Erneux, T. ; Kovanis, V. ; Lester, L. F. / Frequency entrainment in optically injected semiconductor lasers. In: Physical Review Letters. 1997 ; Vol. 78, No. 12. pp. 2353-2356.
@article{5cb44c08e69e4bf8a887575a3abf9b1a,
title = "Frequency entrainment in optically injected semiconductor lasers",
abstract = "We theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.",
author = "Varangis, {P. M.} and A. Gavrielides and T. Erneux and V. Kovanis and Lester, {L. F.}",
year = "1997",
language = "English",
volume = "78",
pages = "2353--2356",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "12",

}

TY - JOUR

T1 - Frequency entrainment in optically injected semiconductor lasers

AU - Varangis, P. M.

AU - Gavrielides, A.

AU - Erneux, T.

AU - Kovanis, V.

AU - Lester, L. F.

PY - 1997

Y1 - 1997

N2 - We theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.

AB - We theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.

UR - http://www.scopus.com/inward/record.url?scp=0031095187&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031095187&partnerID=8YFLogxK

M3 - Article

VL - 78

SP - 2353

EP - 2356

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 12

ER -