Frequency entrainment in optically injected semiconductor lasers

P. M. Varangis, A. Gavrielides, T. Erneux, V. Kovanis, L. F. Lester

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

We theoretically predict and experimentally demonstrate the phenomenon of frequency entrainment in optically injected semiconductor lasers. The laser exhibits nonlinear subharmonic and ultraharmonic resonances for appropriate values of its frequency detuning from the externally injected signal.

Original languageEnglish
Pages (from-to)2353-2356
Number of pages4
JournalPhysical Review Letters
Volume78
Issue number12
DOIs
Publication statusPublished - Jan 1 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Varangis, P. M., Gavrielides, A., Erneux, T., Kovanis, V., & Lester, L. F. (1997). Frequency entrainment in optically injected semiconductor lasers. Physical Review Letters, 78(12), 2353-2356. https://doi.org/10.1103/PhysRevLett.78.2353