Abstract
This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1134-1139 |
| Number of pages | 6 |
| Journal | Cryogenics |
| Volume | 30 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1990 |
| Externally published | Yes |
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Keywords
- electrical properties
- frequency characteristics
- transistors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures. / Laskar, J.; Kolodzey, J.; Ketterson, A.; Caracci, S.; Adesida, I.
In: Cryogenics, Vol. 30, No. 12, 1990, p. 1134-1139.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures
AU - Laskar, J.
AU - Kolodzey, J.
AU - Ketterson, A.
AU - Caracci, S.
AU - Adesida, I.
PY - 1990
Y1 - 1990
N2 - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.
AB - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.
KW - electrical properties
KW - frequency characteristics
KW - transistors
UR - http://www.scopus.com/inward/record.url?scp=0025557669&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025557669&partnerID=8YFLogxK
U2 - 10.1016/0011-2275(90)90221-W
DO - 10.1016/0011-2275(90)90221-W
M3 - Article
AN - SCOPUS:0025557669
VL - 30
SP - 1134
EP - 1139
JO - Cryogenics
JF - Cryogenics
SN - 0011-2275
IS - 12
ER -