Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

J. Laskar, J. Kolodzey, A. Ketterson, S. Caracci, I. Adesida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

Original languageEnglish
Pages (from-to)1134-1139
Number of pages6
JournalCryogenics
Volume30
Issue number12
DOIs
Publication statusPublished - 1990
Externally publishedYes

Fingerprint

Cutoff frequency
High electron mobility transistors
cryogenic temperature
Cryogenics
frequency response
Frequency response
aluminum gallium arsenides
micrometers
Electrons
cut-off
Temperature
electrons
gallium arsenide

Keywords

  • electrical properties
  • frequency characteristics
  • transistors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures. / Laskar, J.; Kolodzey, J.; Ketterson, A.; Caracci, S.; Adesida, I.

In: Cryogenics, Vol. 30, No. 12, 1990, p. 1134-1139.

Research output: Contribution to journalArticle

Laskar, J. ; Kolodzey, J. ; Ketterson, A. ; Caracci, S. ; Adesida, I. / Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures. In: Cryogenics. 1990 ; Vol. 30, No. 12. pp. 1134-1139.
@article{95ee9da2948845e0a0d633199abbf1d8,
title = "Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures",
abstract = "This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80{\%} for gate length Lg = 1.73 μm and 15{\%} for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.",
keywords = "electrical properties, frequency characteristics, transistors",
author = "J. Laskar and J. Kolodzey and A. Ketterson and S. Caracci and I. Adesida",
year = "1990",
doi = "10.1016/0011-2275(90)90221-W",
language = "English",
volume = "30",
pages = "1134--1139",
journal = "Cryogenics",
issn = "0011-2275",
publisher = "Elsevier",
number = "12",

}

TY - JOUR

T1 - Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

AU - Laskar, J.

AU - Kolodzey, J.

AU - Ketterson, A.

AU - Caracci, S.

AU - Adesida, I.

PY - 1990

Y1 - 1990

N2 - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

AB - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

KW - electrical properties

KW - frequency characteristics

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=0025557669&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025557669&partnerID=8YFLogxK

U2 - 10.1016/0011-2275(90)90221-W

DO - 10.1016/0011-2275(90)90221-W

M3 - Article

VL - 30

SP - 1134

EP - 1139

JO - Cryogenics

JF - Cryogenics

SN - 0011-2275

IS - 12

ER -