Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

J. Laskar, J. Kolodzey, A. Ketterson, S. Caracci, I. Adesida

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

Original languageEnglish
Pages (from-to)1134-1139
Number of pages6
JournalCryogenics
Volume30
Issue number12
DOIs
Publication statusPublished - Dec 1990

Keywords

  • electrical properties
  • frequency characteristics
  • transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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