TY - JOUR
T1 - Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures
AU - Laskar, J.
AU - Kolodzey, J.
AU - Ketterson, A.
AU - Caracci, S.
AU - Adesida, I.
N1 - Funding Information:
Special thanks are due to J. Baillargeon and K.Y. Cheng for helpful discussions. The authors also wish to thank Cascade Microtech and Hewlett-Packard for donations of equipment. This work was supported by the National Science Foundation under grant ECD89-43166.
PY - 1990/12
Y1 - 1990/12
N2 - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.
AB - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.
KW - electrical properties
KW - frequency characteristics
KW - transistors
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U2 - 10.1016/0011-2275(90)90221-W
DO - 10.1016/0011-2275(90)90221-W
M3 - Article
AN - SCOPUS:0025557669
VL - 30
SP - 1134
EP - 1139
JO - Cryogenics
JF - Cryogenics
SN - 0011-2275
IS - 12
ER -