Frequency-to-voltage converter based on Bloch oscillations in a capacitively coupled GaAs-GaxAl1-xAs quantum well

D. H. Dunlap, V. Kovanis, R. V. Duncan, J. Simmons

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A charged capacitor which is placed with a semiconductor in a closed loop will normally discharge in a characteristic time τ=1/RC. We show, however, that if a semiconductor of high purity is subjected to a rf bias with frequency ω, discharge does not occur if the voltage across the capacitor is proportional to an integer multiple of Latin small letter h with strokeω/e. Thus a rf frequency may be converted to a dc voltage. The ac to dc conversion is made possible by the interplay between Bloch oscillations induced by the electric field of the external rf source and those induced by the field from the charge residing on the capacitor. The process resembles the frequency-to-voltage conversion by a hysteretic Josephson junction, except that the evolution of the Josephson phase is replaced by the evolution of the crystal momentum of conduction electrons in the semiconductor. We discuss the parameters and conditions for which this behavior may be observed.

Original languageEnglish
Pages (from-to)7975-7980
Number of pages6
JournalPhysical Review B
Volume48
Issue number11
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Semiconductor quantum wells
converters
capacitors
Capacitors
quantum wells
Semiconductor materials
oscillations
Electric potential
electric potential
strokes
conduction electrons
Josephson junctions
integers
Momentum
purity
Electric fields
momentum
Crystals
electric fields
Electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Frequency-to-voltage converter based on Bloch oscillations in a capacitively coupled GaAs-GaxAl1-xAs quantum well. / Dunlap, D. H.; Kovanis, V.; Duncan, R. V.; Simmons, J.

In: Physical Review B, Vol. 48, No. 11, 1993, p. 7975-7980.

Research output: Contribution to journalArticle

Dunlap, D. H. ; Kovanis, V. ; Duncan, R. V. ; Simmons, J. / Frequency-to-voltage converter based on Bloch oscillations in a capacitively coupled GaAs-GaxAl1-xAs quantum well. In: Physical Review B. 1993 ; Vol. 48, No. 11. pp. 7975-7980.
@article{839ee40eff1146b1ba4ba92a3014961b,
title = "Frequency-to-voltage converter based on Bloch oscillations in a capacitively coupled GaAs-GaxAl1-xAs quantum well",
abstract = "A charged capacitor which is placed with a semiconductor in a closed loop will normally discharge in a characteristic time τ=1/RC. We show, however, that if a semiconductor of high purity is subjected to a rf bias with frequency ω, discharge does not occur if the voltage across the capacitor is proportional to an integer multiple of Latin small letter h with strokeω/e. Thus a rf frequency may be converted to a dc voltage. The ac to dc conversion is made possible by the interplay between Bloch oscillations induced by the electric field of the external rf source and those induced by the field from the charge residing on the capacitor. The process resembles the frequency-to-voltage conversion by a hysteretic Josephson junction, except that the evolution of the Josephson phase is replaced by the evolution of the crystal momentum of conduction electrons in the semiconductor. We discuss the parameters and conditions for which this behavior may be observed.",
author = "Dunlap, {D. H.} and V. Kovanis and Duncan, {R. V.} and J. Simmons",
year = "1993",
doi = "10.1103/PhysRevB.48.7975",
language = "English",
volume = "48",
pages = "7975--7980",
journal = "Physical Review B",
issn = "1098-0121",
publisher = "American Physical Society",
number = "11",

}

TY - JOUR

T1 - Frequency-to-voltage converter based on Bloch oscillations in a capacitively coupled GaAs-GaxAl1-xAs quantum well

AU - Dunlap, D. H.

AU - Kovanis, V.

AU - Duncan, R. V.

AU - Simmons, J.

PY - 1993

Y1 - 1993

N2 - A charged capacitor which is placed with a semiconductor in a closed loop will normally discharge in a characteristic time τ=1/RC. We show, however, that if a semiconductor of high purity is subjected to a rf bias with frequency ω, discharge does not occur if the voltage across the capacitor is proportional to an integer multiple of Latin small letter h with strokeω/e. Thus a rf frequency may be converted to a dc voltage. The ac to dc conversion is made possible by the interplay between Bloch oscillations induced by the electric field of the external rf source and those induced by the field from the charge residing on the capacitor. The process resembles the frequency-to-voltage conversion by a hysteretic Josephson junction, except that the evolution of the Josephson phase is replaced by the evolution of the crystal momentum of conduction electrons in the semiconductor. We discuss the parameters and conditions for which this behavior may be observed.

AB - A charged capacitor which is placed with a semiconductor in a closed loop will normally discharge in a characteristic time τ=1/RC. We show, however, that if a semiconductor of high purity is subjected to a rf bias with frequency ω, discharge does not occur if the voltage across the capacitor is proportional to an integer multiple of Latin small letter h with strokeω/e. Thus a rf frequency may be converted to a dc voltage. The ac to dc conversion is made possible by the interplay between Bloch oscillations induced by the electric field of the external rf source and those induced by the field from the charge residing on the capacitor. The process resembles the frequency-to-voltage conversion by a hysteretic Josephson junction, except that the evolution of the Josephson phase is replaced by the evolution of the crystal momentum of conduction electrons in the semiconductor. We discuss the parameters and conditions for which this behavior may be observed.

UR - http://www.scopus.com/inward/record.url?scp=0001033646&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001033646&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.48.7975

DO - 10.1103/PhysRevB.48.7975

M3 - Article

VL - 48

SP - 7975

EP - 7980

JO - Physical Review B

JF - Physical Review B

SN - 1098-0121

IS - 11

ER -