The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics. GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of devices fabricated from Si and other III-V materials. This paper presents the state-of-the-art GaN HEMT technology and describes the potentials for the future.
|Number of pages||8|
|Publication status||Published - 2004|
|Event||Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis|
Duration: May 16 2004 → May 19 2004
|Conference||Proceedings - 2004 24th International Conference on Microelectronics, MIEL 2004|
|Period||5/16/04 → 5/19/04|
ASJC Scopus subject areas