Gate-Controlled Negative Differential Resistance in Drain Current Characteristics of AlGaAs/InGaAs/GaAs Pseudomorphic MODFET’s

J. Laskar, A. A. Ketterson, J. N. Baillargeon, T. Brock, Ilesanmi Adesida, K. Y. Cheng, James Kolodzey

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

We report the observation of negative differential resistance (NDR) and negative transconductance at high drain and gate fields in depletion-mode AlGaAs/fnGaAs/GaAs MODFET’s with gate lengths Lg~ 0.25 μm. It is shown that under high bias voltage conditions, Vds = 2.5 V and Vgs= 0 V, the device drain current characteristic switches from a high current state to a low current state resulting in reflection gain in the drain circuit of the MODFET. The decrease in the drain current of the device corresponds to a sudden increase in the gate current. We show that the device can be operated in two regions: 1) standard MODFET operation for Vgs< 0 V resulting in f max values = 120 GHz, and 2) NDR region which yields operation as a reflection gain amplifier for Vgs = 0 V and Vds = 2.5 V resulting in 2 dB of reflection gain at 26.5 GHz. We attribute the NDR to the redistribution of charge and voltage in the channel caused by electrons crossing the heterobarrier under high-field conditions. The NDR gain regime which is controllable by gate and drain voltages is a new operating mode for MODFET’s under high bias conditions.

Original languageEnglish
Pages (from-to)528-530
Number of pages3
JournalIEEE Electron Device Letters
Volume10
Issue number12
DOIs
Publication statusPublished - Dec 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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