@inproceedings{41bc931cc78346f1a8c1e345aa58f0e6,
title = "Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor",
abstract = "Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies Ea = 140 meV, Eb = 188 meV and Ec = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 × 10-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems.",
author = "Jha, {S. K.} and C. Surya and Chen, {K. J.} and Lau, {K. M.}",
year = "2006",
month = jan,
day = "1",
doi = "10.1109/essder.2006.307649",
language = "English",
isbn = "1424403014",
volume = "2006-January",
series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "105--108",
booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
address = "United States",
note = "ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",
}