Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

S. K. Jha; C. Surya; K. J. Chen; K. M. Lau

doi:10.1109/essder.2006.307649

Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

S. K. Jha, C. Surya, K. J. Chen, K. M. Lau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies E_a = 140 meV, E_b = 188 meV and E_c = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 × 10^-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems.

Original language	English
Title of host publication	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	105-108
Number of pages	4
Volume	2006-January
ISBN (Print)	1424403014, 9781424403011
DOIs	https://doi.org/10.1109/essder.2006.307649
Publication status	Published - Jan 1 2006
Externally published	Yes
Event	ESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux, Switzerland Duration: Sep 19 2006 → Sep 21 2006

Publication series

Name	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Volume	2006-January

Conference

Conference	ESSDERC 2006 - 36th European Solid-State Device Research Conference
Country	Switzerland
City	Montreux
Period	9/19/06 → 9/21/06

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/essder.2006.307649

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Jha, S. K., Surya, C., Chen, K. J., & Lau, K. M. (2006). Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference (Vol. 2006-January, pp. 105-108). [4099867] (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference; Vol. 2006-January). IEEE Computer Society. https://doi.org/10.1109/essder.2006.307649

Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor. / Jha, S. K.; Surya, C.; Chen, K. J.; Lau, K. M.

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. Vol. 2006-January IEEE Computer Society, 2006. p. 105-108 4099867 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference; Vol. 2006-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jha, SK, Surya, C, Chen, KJ & Lau, KM 2006, Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor. in ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. vol. 2006-January, 4099867, ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference, vol. 2006-January, IEEE Computer Society, pp. 105-108, ESSDERC 2006 - 36th European Solid-State Device Research Conference, Montreux, Switzerland, 9/19/06. https://doi.org/10.1109/essder.2006.307649

Jha SK, Surya C, Chen KJ, Lau KM. Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. Vol. 2006-January. IEEE Computer Society. 2006. p. 105-108. 4099867. (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference). https://doi.org/10.1109/essder.2006.307649

Jha, S. K. ; Surya, C. ; Chen, K. J. ; Lau, K. M. / Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. Vol. 2006-January IEEE Computer Society, 2006. pp. 105-108 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference).

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title = "Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor",

abstract = "Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies Ea = 140 meV, Eb = 188 meV and Ec = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 × 10-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems.",

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AB - Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies Ea = 140 meV, Eb = 188 meV and Ec = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 × 10-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems.

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Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

Abstract

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