Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor

S. K. Jha, C. Surya, K. J. Chen, K. M. Lau

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Generation-recombination noise from dual channel MOCVD-grown AlGaN/GaN/AlGaN/GaN HEMTs on sapphire substrate was observed. Local levels with activation energies Ea = 140 meV, Eb = 188 meV and Ec = 201 meV were identified. Devices showed reasonably low values of Hooge parameter (1.06 × 10-4) at room temperature in addition to superior transistor characteristics. The device performance compares favorably to the similar single channel devices. The results show that the devices may have good potential for applications in low phase noise high frequency electronic systems.

Original languageEnglish
Title of host publicationESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages105-108
Number of pages4
Volume2006-January
ISBN (Print)1424403014, 9781424403011
DOIs
Publication statusPublished - Jan 1 2006
Externally publishedYes
EventESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux, Switzerland
Duration: Sep 19 2006Sep 21 2006

Publication series

NameESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Volume2006-January

Conference

ConferenceESSDERC 2006 - 36th European Solid-State Device Research Conference
CountrySwitzerland
CityMontreux
Period9/19/069/21/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Generation recombination noise in dual channel AlGaN/GaN high electron mobility transistor'. Together they form a unique fingerprint.

Cite this