Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors

Anwar Jarndal; Saddam Husain; Mohammad Hashmi

Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors

Anwar Jarndal, Saddam Husain, Mohammad Hashmi

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	International Journal of RF and Microwave Computer-Aided Engineering
Publication status	Published - Mar 31 2021

Cite this

@article{83c09f2d9da14ce38752b05414756b6b,

title = "Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors",

author = "Anwar Jarndal and Saddam Husain and Mohammad Hashmi",

year = "2021",

month = mar,

day = "31",

language = "English",

journal = "International Journal of RF and Microwave Computer-Aided Engineering",

issn = "1096-4290",

publisher = "John Wiley and Sons Inc.",

}

TY - JOUR

T1 - Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors

AU - Jarndal, Anwar

AU - Husain, Saddam

AU - Hashmi, Mohammad

PY - 2021/3/31

Y1 - 2021/3/31

M3 - Article

SN - 1096-4290

JO - International Journal of RF and Microwave Computer-Aided Engineering

JF - International Journal of RF and Microwave Computer-Aided Engineering

ER -