Germanium selenide as a negative inorganic resist for ion beam microfabrication

K. Balasubramanyam, I. Adesida, A. L. Ruoff, E. D. Wolf

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge0.25Se0.75, was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10-5 C/cm2 to 1.4×10-6 C/cm2 for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed.

Original languageEnglish
Pages (from-to)35-42
Number of pages8
JournalMicroelectronics Journal
Volume14
Issue number1
DOIs
Publication statusPublished - Jan 1 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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