Giant nonlinear gain coefficient of an InAs/AlGaInAs quantum dot laser

L. F. Lester, N. B. Terry, A. J. Moscho, M. L. Fanto, N. A. Naderi, Y. Li, V. Kovanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


The linewidth enhancement factor (LEF) and nonlinear gain coefficient of an InAs/AlGalnAs quantum dot (QD) laser are measured using an injection locking technique. The nonlinear gain coefficient was found by curve-fitting the measured LEF as a linear function of the output power. The LEF of the InAs/AlGalnAs quantum dot laser was measured to be 1.2 to 8.6 at output powers from 2 to 10.2 mW, leading to a corresponding nonlinear gain coefficient of 1.4 × 10-14 cm3. This value for the nonlinear gain coefficient is three orders of magnitude higher than the typical quantum well nonlinear gain coefficient of 10-17 cm3. Consequently we expect that the dynamics under optical injection and external feedback of this type of quantum dot laser will be dramatically different than in quantum well lasers, suggesting that a careful re-examination of the dynamics of this type of laser is needed.

Original languageEnglish
Title of host publicationPhysics and Simulation of Optoelectronic Devices XVI
Publication statusPublished - Mar 31 2008
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices XVI - San Jose, CA, United States
Duration: Jan 21 2008Jan 24 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhysics and Simulation of Optoelectronic Devices XVI
CountryUnited States
CitySan Jose, CA


  • Injection locking
  • Linewidth enhancement factor
  • Non-linear gain
  • Quantum-dash
  • Semiconductor laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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