Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation

V. V. Brus; P. D. Maryanchuk; M. I. Ilashchuk; J. Rappich; I. S. Babichuk; Z. D. Kovalyuk

doi:10.1016/j.solener.2014.11.023

Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation

V. V. Brus, P. D. Maryanchuk, M. I. Ilashchuk, J. Rappich, I. S. Babichuk, Z. D. Kovalyuk

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We report on the analysis of the electrical and photoelectrical properties of graphitic carbon/n-CdTe Schottky-type heterojunction solar cells, which have been prepared by the deposition of transparent graphitic carbon films of nanometer thickness onto freshly cleaved n-CdTe substrates by the electron-beam evaporation technique. The presence of the electrically-active interface states at the heterojunction interface was revealed from the analysis of the dominating current transport at forward and reverse bias and from the capacitance-voltage characteristics. The unoptimized graphitic carbon/n-CdTe Schottky-type heterojunctions possess a rectification ratio of RR=1390 and produce a maximum short circuit current density of J_sc=8.47mAcm^-2, an open-circuit voltage of V_oc=0.435V and fill factor of FF=0.37 under standard illumination conditions (100mWcm^-2 AM 1.5).

Original language	English
Pages (from-to)	78-84
Number of pages	7
Journal	Solar Energy
Volume	112
DOIs	https://doi.org/10.1016/j.solener.2014.11.023
Publication status	Published - Feb 1 2015
Externally published	Yes

Keywords

Carbon
Graphite
Heterojunction
Solar cell
Thin film

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Materials Science(all)

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title = "Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation",

abstract = "We report on the analysis of the electrical and photoelectrical properties of graphitic carbon/n-CdTe Schottky-type heterojunction solar cells, which have been prepared by the deposition of transparent graphitic carbon films of nanometer thickness onto freshly cleaved n-CdTe substrates by the electron-beam evaporation technique. The presence of the electrically-active interface states at the heterojunction interface was revealed from the analysis of the dominating current transport at forward and reverse bias and from the capacitance-voltage characteristics. The unoptimized graphitic carbon/n-CdTe Schottky-type heterojunctions possess a rectification ratio of RR=1390 and produce a maximum short circuit current density of Jsc=8.47mAcm-2, an open-circuit voltage of Voc=0.435V and fill factor of FF=0.37 under standard illumination conditions (100mWcm-2 AM 1.5).",

keywords = "Carbon, Graphite, Heterojunction, Solar cell, Thin film",

author = "Brus, {V. V.} and Maryanchuk, {P. D.} and Ilashchuk, {M. I.} and J. Rappich and Babichuk, {I. S.} and Kovalyuk, {Z. D.}",

year = "2015",

month = feb,

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doi = "10.1016/j.solener.2014.11.023",

language = "English",

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journal = "Solar Energy",

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T1 - Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation

AU - Brus, V. V.

AU - Maryanchuk, P. D.

AU - Ilashchuk, M. I.

AU - Rappich, J.

AU - Babichuk, I. S.

AU - Kovalyuk, Z. D.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - We report on the analysis of the electrical and photoelectrical properties of graphitic carbon/n-CdTe Schottky-type heterojunction solar cells, which have been prepared by the deposition of transparent graphitic carbon films of nanometer thickness onto freshly cleaved n-CdTe substrates by the electron-beam evaporation technique. The presence of the electrically-active interface states at the heterojunction interface was revealed from the analysis of the dominating current transport at forward and reverse bias and from the capacitance-voltage characteristics. The unoptimized graphitic carbon/n-CdTe Schottky-type heterojunctions possess a rectification ratio of RR=1390 and produce a maximum short circuit current density of Jsc=8.47mAcm-2, an open-circuit voltage of Voc=0.435V and fill factor of FF=0.37 under standard illumination conditions (100mWcm-2 AM 1.5).

AB - We report on the analysis of the electrical and photoelectrical properties of graphitic carbon/n-CdTe Schottky-type heterojunction solar cells, which have been prepared by the deposition of transparent graphitic carbon films of nanometer thickness onto freshly cleaved n-CdTe substrates by the electron-beam evaporation technique. The presence of the electrically-active interface states at the heterojunction interface was revealed from the analysis of the dominating current transport at forward and reverse bias and from the capacitance-voltage characteristics. The unoptimized graphitic carbon/n-CdTe Schottky-type heterojunctions possess a rectification ratio of RR=1390 and produce a maximum short circuit current density of Jsc=8.47mAcm-2, an open-circuit voltage of Voc=0.435V and fill factor of FF=0.37 under standard illumination conditions (100mWcm-2 AM 1.5).

KW - Carbon

KW - Graphite

KW - Heterojunction

KW - Solar cell

KW - Thin film

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DO - 10.1016/j.solener.2014.11.023

M3 - Article

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VL - 112

SP - 78

EP - 84

JO - Solar Energy

JF - Solar Energy

SN - 0038-092X

ER -

Graphitic carbon/n-CdTe Schottky-type heterojunction solar cells prepared by electron-beam evaporation

Abstract

Keywords

ASJC Scopus subject areas

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