We report on the analysis of the electrical and photoelectrical properties of graphitic carbon/n-CdTe Schottky-type heterojunction solar cells, which have been prepared by the deposition of transparent graphitic carbon films of nanometer thickness onto freshly cleaved n-CdTe substrates by the electron-beam evaporation technique. The presence of the electrically-active interface states at the heterojunction interface was revealed from the analysis of the dominating current transport at forward and reverse bias and from the capacitance-voltage characteristics. The unoptimized graphitic carbon/n-CdTe Schottky-type heterojunctions possess a rectification ratio of RR=1390 and produce a maximum short circuit current density of Jsc=8.47mAcm-2, an open-circuit voltage of Voc=0.435V and fill factor of FF=0.37 under standard illumination conditions (100mWcm-2 AM 1.5).
- Solar cell
- Thin film
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Materials Science(all)