Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask

C. P. Chan, Z. Chen, H. Lam, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper we report the growth and characterization of Cu 2ZnSnS4 (CZTS) nanostructures by co-electrodeposition technique using CuCl2, SnCl2 and ZnCl2 as sources and choline-based ionic liquid (IL) as the electrolyte. X-ray diffraction analysis of CZTS thin films grown by this technique indicated that the films have a kesterite structure with preferred grain orientation along (112). It is found that the energy bandgap of the material is about 1.49eV and the optical absorption coefficient is in the order of 104cm -1. Anodized aluminum oxide (AAO) was used as the growth mask for the growth of the nanostructures. Anodization of the aluminum foil was carried out in phosphoric acid solution at 1°C and a potential of 40 to 100V was applied. Sulfurization of the rods was performed in elemental sulfur vapor at 450°C for four hours using N2 as the ambient gas. Experimental results show that nanotubes were formed using the technique and the diameter can be well controlled by varying the applied potential in the anodization process. Electron diffraction experiments show that a mixture of single- and poly-crystalline nanostructures was found.

Original languageEnglish
Title of host publicationNanoscale Photonic and Cell Technologies for Photovoltaics II
Volume7411
DOIs
Publication statusPublished - Oct 19 2009
Externally publishedYes
EventNanoscale Photonic and Cell Technologies for Photovoltaics II - San Diego, CA, United States
Duration: Aug 2 2009Aug 4 2009

Conference

ConferenceNanoscale Photonic and Cell Technologies for Photovoltaics II
CountryUnited States
CitySan Diego, CA
Period8/2/098/4/09

Fingerprint

Nanostructures
Aluminum
Mask
Masks
masks
aluminum
Ionic Liquid
Electrodeposition
Ionic Liquids
choline
Aluminum foil
Optical Absorption
Aluminum Oxide
Absorption Coefficient
phosphoric acid
Phosphoric acid
Electrolyte
Choline
Nanotubes
Ionic liquids

Keywords

  • Anodized aluminum oxide
  • Copper zinc tin sulfide
  • Electrodeposition
  • Ionic liquid
  • Nanostructures
  • Photovoltaic material

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chan, C. P., Chen, Z., Lam, H., & Surya, C. (2009). Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask. In Nanoscale Photonic and Cell Technologies for Photovoltaics II (Vol. 7411). [741108] https://doi.org/10.1117/12.826802

Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask. / Chan, C. P.; Chen, Z.; Lam, H.; Surya, C.

Nanoscale Photonic and Cell Technologies for Photovoltaics II. Vol. 7411 2009. 741108.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chan, CP, Chen, Z, Lam, H & Surya, C 2009, Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask. in Nanoscale Photonic and Cell Technologies for Photovoltaics II. vol. 7411, 741108, Nanoscale Photonic and Cell Technologies for Photovoltaics II, San Diego, CA, United States, 8/2/09. https://doi.org/10.1117/12.826802
Chan CP, Chen Z, Lam H, Surya C. Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask. In Nanoscale Photonic and Cell Technologies for Photovoltaics II. Vol. 7411. 2009. 741108 https://doi.org/10.1117/12.826802
Chan, C. P. ; Chen, Z. ; Lam, H. ; Surya, C. / Growth and characterization of cu2znsns4 nanostructures using anodized aluminum as the growth mask. Nanoscale Photonic and Cell Technologies for Photovoltaics II. Vol. 7411 2009.
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