Growth and characterization of GaN/InGaN multiple quantum wells on nanoscale epitaxial lateral overgrown layers

W. K. Fong, K. K. Leung, C. Surya

Research output: Contribution to journalArticle

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Abstract

GaN/InGaN multiple quantum wells (MQWs) were fabricated on nanoscale epitaxial lateral overgrown (NELO) GaN layers (type N) by metal-organic chemical vapor deposition using a SiO2 layer with nanometer scale windows as the growth mask. Transmission electron microscopy (TEM) results clearly demonstrate coherent growth of GaN in the window regions while lateral growth is observed over the SiO2 layer. Based on the TEM and atomic force microscopy measurements, we observed substantial reduction in the threading dislocation density for the type N GaN films. Experimental results on electroluminescence (EL) measurement indicate substantial improvement in the EL intensity as well as a 15 nm blue shift in the EL peak wavelength. High resolution X-ray diffraction and reciprocal space mapping characterizations clearly indicate significant reduction in strain generation in the MQWs grown on NELO GaN layers compared to the control samples (type C). Such reduction in strain generation in the MQW gives rise to the reduction in the quantum-confined Stark effect. This is also consistent with the observed blue-shift in the EL peak. Detailed analyses of the optoelectronic properties of the devices indicate significant improvements in the internal quantum efficiency, ηi, and the extraction efficiency, ηe, by as much as 55.8 and 57.3%, respectively, compared to the type C devices. The improvement in ηi is attributed to reductions in both the nonradiative recombination centers and the quantum-confined Stark effect in the type N devices and the improvement in the extraction efficiency is attributed to the texturing of the GaN layer due to the incorporation of the SiO2 layer with nanometer scale windows.

Original languageEnglish
Pages (from-to)2091-2097
Number of pages7
JournalCrystal Growth and Design
Volume11
Issue number6
DOIs
Publication statusPublished - Jun 1 2011
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Electroluminescence
quantum wells
electroluminescence
Stark effect
blue shift
Transmission electron microscopy
Organic Chemicals
Texturing
Organic chemicals
transmission electron microscopy
Quantum efficiency
Optoelectronic devices
Masks
Chemical vapor deposition
Atomic force microscopy
Metals
metalorganic chemical vapor deposition
quantum efficiency
masks

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Growth and characterization of GaN/InGaN multiple quantum wells on nanoscale epitaxial lateral overgrown layers. / Fong, W. K.; Leung, K. K.; Surya, C.

In: Crystal Growth and Design, Vol. 11, No. 6, 01.06.2011, p. 2091-2097.

Research output: Contribution to journalArticle

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