Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, H. C. Kuo, A. Moy, J. Miller, K. C. Hsieh, K. Y. Cheng, H. Chen, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, W. Wu, J. Tucker, Y. C. Chang, L. LiH. C. Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.

Original languageEnglish
Pages (from-to)1382-1388
Number of pages7
JournalJournal of Electronic Materials
Volume26
Issue number12
Publication statusPublished - Dec 1997
Externally publishedYes

Fingerprint

Quantum well infrared photodetectors
quantum well infrared photodetectors
Semiconductor quantum wells
quantum wells
x ray diffraction
Diffraction
Gas source molecular beam epitaxy
X rays
Crystals
Photocurrents
crystals
photocurrents
Microscopic examination
molecular beam epitaxy
Transmission electron microscopy
microscopy
orbitals
transmission electron microscopy
gases

Keywords

  • Gas source molecular beam epitaxy (MBE)
  • InGaAs/InP
  • Quantum well infrared photodetectors QWIPs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Sengupta, D. K., Jackson, S. L., Curtis, A. P., Fang, W., Malin, J. I., Horton, T. U., ... Liu, H. C. (1997). Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells. Journal of Electronic Materials, 26(12), 1382-1388.

Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells. / Sengupta, D. K.; Jackson, S. L.; Curtis, A. P.; Fang, W.; Malin, J. I.; Horton, T. U.; Kuo, H. C.; Moy, A.; Miller, J.; Hsieh, K. C.; Cheng, K. Y.; Chen, H.; Adesida, I.; Chuang, S. L.; Feng, M.; Stillman, G. E.; Wu, W.; Tucker, J.; Chang, Y. C.; Li, L.; Liu, H. C.

In: Journal of Electronic Materials, Vol. 26, No. 12, 12.1997, p. 1382-1388.

Research output: Contribution to journalArticle

Sengupta, DK, Jackson, SL, Curtis, AP, Fang, W, Malin, JI, Horton, TU, Kuo, HC, Moy, A, Miller, J, Hsieh, KC, Cheng, KY, Chen, H, Adesida, I, Chuang, SL, Feng, M, Stillman, GE, Wu, W, Tucker, J, Chang, YC, Li, L & Liu, HC 1997, 'Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells', Journal of Electronic Materials, vol. 26, no. 12, pp. 1382-1388.
Sengupta DK, Jackson SL, Curtis AP, Fang W, Malin JI, Horton TU et al. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells. Journal of Electronic Materials. 1997 Dec;26(12):1382-1388.
Sengupta, D. K. ; Jackson, S. L. ; Curtis, A. P. ; Fang, W. ; Malin, J. I. ; Horton, T. U. ; Kuo, H. C. ; Moy, A. ; Miller, J. ; Hsieh, K. C. ; Cheng, K. Y. ; Chen, H. ; Adesida, I. ; Chuang, S. L. ; Feng, M. ; Stillman, G. E. ; Wu, W. ; Tucker, J. ; Chang, Y. C. ; Li, L. ; Liu, H. C. / Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 12. pp. 1382-1388.
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abstract = "High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10{\AA}) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.",
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AU - Sengupta, D. K.

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AU - Fang, W.

AU - Malin, J. I.

AU - Horton, T. U.

AU - Kuo, H. C.

AU - Moy, A.

AU - Miller, J.

AU - Hsieh, K. C.

AU - Cheng, K. Y.

AU - Chen, H.

AU - Adesida, I.

AU - Chuang, S. L.

AU - Feng, M.

AU - Stillman, G. E.

AU - Wu, W.

AU - Tucker, J.

AU - Chang, Y. C.

AU - Li, L.

AU - Liu, H. C.

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