Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, H. C. Kuo, A. Moy, J. Miller, K. C. Hsieh, K. Y. Cheng, H. Chen, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, W. Wu, J. Tucker, Y. C. Chang, L. LiH. C. Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10Å) and peak response at 4.55 μm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-crystal x-ray diffraction (DCXRD), and cross-sectional transmission electron microscopy (XTEM). Based on the structural parameters determined by XTEM, XSTM, and DCXRD, the field dependent photocurrent spectra were simulated using a six-band effective bond-orbital model. The theoretical calculations are in excellent agreement with experimental data. When used to fabricate p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs), and combined with the high responsivity of 8.93 μm n-type InGaAs/InP QWIPs, these structures offer the possibility of dual band monolithically integrated QWIPs.

Original languageEnglish
Pages (from-to)1382-1388
Number of pages7
JournalJournal of Electronic Materials
Volume26
Issue number12
DOIs
Publication statusPublished - Dec 1997
Externally publishedYes

Keywords

  • Gas source molecular beam epitaxy (MBE)
  • InGaAs/InP
  • Quantum well infrared photodetectors QWIPs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells'. Together they form a unique fingerprint.

  • Cite this

    Sengupta, D. K., Jackson, S. L., Curtis, A. P., Fang, W., Malin, J. I., Horton, T. U., Kuo, H. C., Moy, A., Miller, J., Hsieh, K. C., Cheng, K. Y., Chen, H., Adesida, I., Chuang, S. L., Feng, M., Stillman, G. E., Wu, W., Tucker, J., Chang, Y. C., ... Liu, H. C. (1997). Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells. Journal of Electronic Materials, 26(12), 1382-1388. https://doi.org/10.1007/s11664-997-0055-2