Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang, Y. C. Chang, L. Cooper, I. Adesida, I. Bloom, K. C. Hsieh, W. Fang, J. I. Malin, A. P. Curtis, T. Horton, G. E. Stillman, S. D. Gunapala, S. V. Bandara, F. Pool, J. K. Liu, M. Mckelvey, E. LuongW. Hong, J. Mumolo, H. C. Liu, W. I. Wang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown by metalorganic chemical vapor deposition (MOCVD). Important issues for QWIP application such as dark current, spectral response, and absolute responsivity were measured. We find that the detector structure grown on a GaAs-on-Si substrate exhibits comparable dark current and absolute responsivity and a small blue shift in the spectral response. This is the first demonstration of long wavelength GaAs/AlGaAs quantum well infrared photodetector using MOCVD grown GaAs-on-Si substrate and the performance is comparable to a similar detector structure grown on a GaAs substrate.

Original languageEnglish
Pages (from-to)858-865
Number of pages8
JournalJournal of Electronic Materials
Volume27
Issue number7
DOIs
Publication statusPublished - Jul 1998

Keywords

  • Dark current characteristics
  • Peak response wavelength
  • Quantum efficiency
  • Quantum well infrared photodetectors (QWIPs)
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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