Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate

D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang, Y. C. Chang, L. Cooper, I. Adesida, I. Bloom, K. C. Hsieh, W. Fang, J. I. Malin, A. P. Curtis, T. Horton, G. E. Stillman, S. D. Gunapala, S. V. Bandara, F. Pool, J. K. Liu, M. Mckelvey, E. Luong & 4 others W. Hong, J. Mumolo, H. C. Liu, W. I. Wang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown by metalorganic chemical vapor deposition (MOCVD). Important issues for QWIP application such as dark current, spectral response, and absolute responsivity were measured. We find that the detector structure grown on a GaAs-on-Si substrate exhibits comparable dark current and absolute responsivity and a small blue shift in the spectral response. This is the first demonstration of long wavelength GaAs/AlGaAs quantum well infrared photodetector using MOCVD grown GaAs-on-Si substrate and the performance is comparable to a similar detector structure grown on a GaAs substrate.

Original languageEnglish
Pages (from-to)858-865
Number of pages8
JournalJournal of Electronic Materials
Volume27
Issue number7
Publication statusPublished - Jul 1998
Externally publishedYes

Fingerprint

Quantum well infrared photodetectors
quantum well infrared photodetectors
aluminum gallium arsenides
Substrates
Dark currents
Metallorganic chemical vapor deposition
dark current
spectral sensitivity
metalorganic chemical vapor deposition
Detectors
detectors
blue shift
Molecular beam epitaxy
Demonstrations
molecular beam epitaxy
gallium arsenide
Wavelength
wavelengths

Keywords

  • Dark current characteristics
  • Peak response wavelength
  • Quantum efficiency
  • Quantum well infrared photodetectors (QWIPs)
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Sengupta, D. K., Weisman, M. B., Feng, M., Chuang, S. L., Chang, Y. C., Cooper, L., ... Wang, W. I. (1998). Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate. Journal of Electronic Materials, 27(7), 858-865.

Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate. / Sengupta, D. K.; Weisman, M. B.; Feng, M.; Chuang, S. L.; Chang, Y. C.; Cooper, L.; Adesida, I.; Bloom, I.; Hsieh, K. C.; Fang, W.; Malin, J. I.; Curtis, A. P.; Horton, T.; Stillman, G. E.; Gunapala, S. D.; Bandara, S. V.; Pool, F.; Liu, J. K.; Mckelvey, M.; Luong, E.; Hong, W.; Mumolo, J.; Liu, H. C.; Wang, W. I.

In: Journal of Electronic Materials, Vol. 27, No. 7, 07.1998, p. 858-865.

Research output: Contribution to journalArticle

Sengupta, DK, Weisman, MB, Feng, M, Chuang, SL, Chang, YC, Cooper, L, Adesida, I, Bloom, I, Hsieh, KC, Fang, W, Malin, JI, Curtis, AP, Horton, T, Stillman, GE, Gunapala, SD, Bandara, SV, Pool, F, Liu, JK, Mckelvey, M, Luong, E, Hong, W, Mumolo, J, Liu, HC & Wang, WI 1998, 'Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate', Journal of Electronic Materials, vol. 27, no. 7, pp. 858-865.
Sengupta DK, Weisman MB, Feng M, Chuang SL, Chang YC, Cooper L et al. Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate. Journal of Electronic Materials. 1998 Jul;27(7):858-865.
Sengupta, D. K. ; Weisman, M. B. ; Feng, M. ; Chuang, S. L. ; Chang, Y. C. ; Cooper, L. ; Adesida, I. ; Bloom, I. ; Hsieh, K. C. ; Fang, W. ; Malin, J. I. ; Curtis, A. P. ; Horton, T. ; Stillman, G. E. ; Gunapala, S. D. ; Bandara, S. V. ; Pool, F. ; Liu, J. K. ; Mckelvey, M. ; Luong, E. ; Hong, W. ; Mumolo, J. ; Liu, H. C. ; Wang, W. I. / Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate. In: Journal of Electronic Materials. 1998 ; Vol. 27, No. 7. pp. 858-865.
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AU - Weisman, M. B.

AU - Feng, M.

AU - Chuang, S. L.

AU - Chang, Y. C.

AU - Cooper, L.

AU - Adesida, I.

AU - Bloom, I.

AU - Hsieh, K. C.

AU - Fang, W.

AU - Malin, J. I.

AU - Curtis, A. P.

AU - Horton, T.

AU - Stillman, G. E.

AU - Gunapala, S. D.

AU - Bandara, S. V.

AU - Pool, F.

AU - Liu, J. K.

AU - Mckelvey, M.

AU - Luong, E.

AU - Hong, W.

AU - Mumolo, J.

AU - Liu, H. C.

AU - Wang, W. I.

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