Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

D. K. Sengupta; S. L. Jackson; A. P. Curtis; W. Fang; J. I. Malin; T. U. Horton; Q. Hartman; H. C. Kuo; S. Thomas; J. Miller; K. C. Hsieh; I. Adesida; S. L. Chuang; M. Feng; G. E. Stillman; Y. C. Chang; W. Wu; J. Tucker; H. Chen; J. M. Gibson; J. Mazumder; L. Li; H. C. Liu

doi:10.1007/s11664-997-0054-3

Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, Q. Hartman, H. C. Kuo, S. Thomas, J. Miller, K. C. Hsieh, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, Y. C. Chang, W. Wu, J. Tucker, H. Chen, J. M. GibsonJ. Mazumder, L. Li, H. C. Liu

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

Original language	English
Pages (from-to)	1376-1381
Number of pages	6
Journal	Journal of Electronic Materials
Volume	26
Issue number	12
DOIs	https://doi.org/10.1007/s11664-997-0054-3
Publication status	Published - Dec 1997
Externally published	Yes

Keywords

Gas source molecular beam epitaxy (GSMBE)
InP/inGaAs
Quantum-well infrared photodectors (QWIPs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-997-0054-3

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Sengupta, D. K., Jackson, S. L., Curtis, A. P., Fang, W., Malin, J. I., Horton, T. U., Hartman, Q., Kuo, H. C., Thomas, S., Miller, J., Hsieh, K. C., Adesida, I., Chuang, S. L., Feng, M., Stillman, G. E., Chang, Y. C., Wu, W., Tucker, J., Chen, H., ... Liu, H. C. (1997). Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. Journal of Electronic Materials, 26(12), 1376-1381. https://doi.org/10.1007/s11664-997-0054-3

Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. / Sengupta, D. K.; Jackson, S. L.; Curtis, A. P.; Fang, W.; Malin, J. I.; Horton, T. U.; Hartman, Q.; Kuo, H. C.; Thomas, S.; Miller, J.; Hsieh, K. C.; Adesida, I.; Chuang, S. L.; Feng, M.; Stillman, G. E.; Chang, Y. C.; Wu, W.; Tucker, J.; Chen, H.; Gibson, J. M.; Mazumder, J.; Li, L.; Liu, H. C.

In: Journal of Electronic Materials, Vol. 26, No. 12, 12.1997, p. 1376-1381.

Research output: Contribution to journal › Article › peer-review

Sengupta, DK, Jackson, SL, Curtis, AP, Fang, W, Malin, JI, Horton, TU, Hartman, Q, Kuo, HC, Thomas, S, Miller, J, Hsieh, KC, Adesida, I, Chuang, SL, Feng, M, Stillman, GE, Chang, YC, Wu, W, Tucker, J, Chen, H, Gibson, JM, Mazumder, J, Li, L & Liu, HC 1997, 'Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm', Journal of Electronic Materials, vol. 26, no. 12, pp. 1376-1381. https://doi.org/10.1007/s11664-997-0054-3

Sengupta, D. K. ; Jackson, S. L. ; Curtis, A. P. ; Fang, W. ; Malin, J. I. ; Horton, T. U. ; Hartman, Q. ; Kuo, H. C. ; Thomas, S. ; Miller, J. ; Hsieh, K. C. ; Adesida, I. ; Chuang, S. L. ; Feng, M. ; Stillman, G. E. ; Chang, Y. C. ; Wu, W. ; Tucker, J. ; Chen, H. ; Gibson, J. M. ; Mazumder, J. ; Li, L. ; Liu, H. C. / Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 12. pp. 1376-1381.

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title = "Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm",

abstract = "We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.",

keywords = "Gas source molecular beam epitaxy (GSMBE), InP/inGaAs, Quantum-well infrared photodectors (QWIPs)",

author = "Sengupta, {D. K.} and Jackson, {S. L.} and Curtis, {A. P.} and W. Fang and Malin, {J. I.} and Horton, {T. U.} and Q. Hartman and Kuo, {H. C.} and S. Thomas and J. Miller and Hsieh, {K. C.} and I. Adesida and Chuang, {S. L.} and M. Feng and Stillman, {G. E.} and Chang, {Y. C.} and W. Wu and J. Tucker and H. Chen and Gibson, {J. M.} and J. Mazumder and L. Li and Liu, {H. C.}",

note = "Funding Information: This work is supported by the U.S. Air Force Wright Laboratory under contract number F33615-91-C-1805, and by JSEP under contract number N00014-96-1-0129. We are grateful to Drs. S.D. Gunapala and K.M.S.V Bandara of JPL, Pasadena, K.K. Choi of U.S. Army Research Labs, New Jersey, M. Dodd and J. Scheihing of WPAFB. Ohio, M. Fresina amd D. Ahmari of Semiconductor Research Group, University of Illinois at Urbana-Champaign for many helpful discussions.",

year = "1997",

month = dec,

doi = "10.1007/s11664-997-0054-3",

language = "English",

volume = "26",

pages = "1376--1381",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

AU - Sengupta, D. K.

AU - Jackson, S. L.

AU - Curtis, A. P.

AU - Fang, W.

AU - Malin, J. I.

AU - Horton, T. U.

AU - Hartman, Q.

AU - Kuo, H. C.

AU - Thomas, S.

AU - Miller, J.

AU - Hsieh, K. C.

AU - Adesida, I.

AU - Chuang, S. L.

AU - Feng, M.

AU - Stillman, G. E.

AU - Chang, Y. C.

AU - Wu, W.

AU - Tucker, J.

AU - Chen, H.

AU - Gibson, J. M.

AU - Mazumder, J.

AU - Li, L.

AU - Liu, H. C.

N1 - Funding Information: This work is supported by the U.S. Air Force Wright Laboratory under contract number F33615-91-C-1805, and by JSEP under contract number N00014-96-1-0129. We are grateful to Drs. S.D. Gunapala and K.M.S.V Bandara of JPL, Pasadena, K.K. Choi of U.S. Army Research Labs, New Jersey, M. Dodd and J. Scheihing of WPAFB. Ohio, M. Fresina amd D. Ahmari of Semiconductor Research Group, University of Illinois at Urbana-Champaign for many helpful discussions.

PY - 1997/12

Y1 - 1997/12

N2 - We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

AB - We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

KW - Gas source molecular beam epitaxy (GSMBE)

KW - InP/inGaAs

KW - Quantum-well infrared photodectors (QWIPs)

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JO - Journal of Electronic Materials

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