Abstract
We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.
Original language | English |
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Pages (from-to) | 1376-1381 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 26 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 1997 |
Externally published | Yes |
Keywords
- Gas source molecular beam epitaxy (GSMBE)
- InP/inGaAs
- Quantum-well infrared photodectors (QWIPs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry