Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, Q. Hartman, H. C. Kuo, S. Thomas, J. Miller, K. C. Hsieh, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, Y. C. Chang, W. Wu, J. Tucker, H. Chen, J. M. GibsonJ. Mazumder, L. Li, H. C. Liu

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

Original languageEnglish
Pages (from-to)1376-1381
Number of pages6
JournalJournal of Electronic Materials
Volume26
Issue number12
Publication statusPublished - Dec 1997
Externally publishedYes

Fingerprint

Quantum well infrared photodetectors
quantum well infrared photodetectors
Semiconductor quantum wells
quantum wells
Molecular beams
Dark currents
Photodetectors
dark current
Photocurrents
spectral sensitivity
molecular beams
photocurrents
photometers
x ray diffraction
Diffraction
Gases
Transmission electron microscopy
X rays
orbitals
transmission electron microscopy

Keywords

  • Gas source molecular beam epitaxy (GSMBE)
  • InP/inGaAs
  • Quantum-well infrared photodectors (QWIPs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Sengupta, D. K., Jackson, S. L., Curtis, A. P., Fang, W., Malin, J. I., Horton, T. U., ... Liu, H. C. (1997). Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. Journal of Electronic Materials, 26(12), 1376-1381.

Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. / Sengupta, D. K.; Jackson, S. L.; Curtis, A. P.; Fang, W.; Malin, J. I.; Horton, T. U.; Hartman, Q.; Kuo, H. C.; Thomas, S.; Miller, J.; Hsieh, K. C.; Adesida, I.; Chuang, S. L.; Feng, M.; Stillman, G. E.; Chang, Y. C.; Wu, W.; Tucker, J.; Chen, H.; Gibson, J. M.; Mazumder, J.; Li, L.; Liu, H. C.

In: Journal of Electronic Materials, Vol. 26, No. 12, 12.1997, p. 1376-1381.

Research output: Contribution to journal › Article

Sengupta, DK, Jackson, SL, Curtis, AP, Fang, W, Malin, JI, Horton, TU, Hartman, Q, Kuo, HC, Thomas, S, Miller, J, Hsieh, KC, Adesida, I, Chuang, SL, Feng, M, Stillman, GE, Chang, YC, Wu, W, Tucker, J, Chen, H, Gibson, JM, Mazumder, J, Li, L & Liu, HC 1997, 'Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm', Journal of Electronic Materials, vol. 26, no. 12, pp. 1376-1381.
Sengupta DK, Jackson SL, Curtis AP, Fang W, Malin JI, Horton TU et al. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. Journal of Electronic Materials. 1997 Dec;26(12):1376-1381.
Sengupta, D. K. ; Jackson, S. L. ; Curtis, A. P. ; Fang, W. ; Malin, J. I. ; Horton, T. U. ; Hartman, Q. ; Kuo, H. C. ; Thomas, S. ; Miller, J. ; Hsieh, K. C. ; Adesida, I. ; Chuang, S. L. ; Feng, M. ; Stillman, G. E. ; Chang, Y. C. ; Wu, W. ; Tucker, J. ; Chen, H. ; Gibson, J. M. ; Mazumder, J. ; Li, L. ; Liu, H. C. / Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 12. pp. 1376-1381.
@article{584082258c364a6b801b549d17e11ead,
title = "Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm",
abstract = "We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.",
keywords = "Gas source molecular beam epitaxy (GSMBE), InP/inGaAs, Quantum-well infrared photodectors (QWIPs)",
author = "Sengupta, {D. K.} and Jackson, {S. L.} and Curtis, {A. P.} and W. Fang and Malin, {J. I.} and Horton, {T. U.} and Q. Hartman and Kuo, {H. C.} and S. Thomas and J. Miller and Hsieh, {K. C.} and I. Adesida and Chuang, {S. L.} and M. Feng and Stillman, {G. E.} and Chang, {Y. C.} and W. Wu and J. Tucker and H. Chen and Gibson, {J. M.} and J. Mazumder and L. Li and Liu, {H. C.}",
year = "1997",
month = "12",
language = "English",
volume = "26",
pages = "1376--1381",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "12",

}

TY - JOUR

T1 - Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

AU - Sengupta, D. K.

AU - Jackson, S. L.

AU - Curtis, A. P.

AU - Fang, W.

AU - Malin, J. I.

AU - Horton, T. U.

AU - Hartman, Q.

AU - Kuo, H. C.

AU - Thomas, S.

AU - Miller, J.

AU - Hsieh, K. C.

AU - Adesida, I.

AU - Chuang, S. L.

AU - Feng, M.

AU - Stillman, G. E.

AU - Chang, Y. C.

AU - Wu, W.

AU - Tucker, J.

AU - Chen, H.

AU - Gibson, J. M.

AU - Mazumder, J.

AU - Li, L.

AU - Liu, H. C.

PY - 1997/12

Y1 - 1997/12

N2 - We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

AB - We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

KW - Gas source molecular beam epitaxy (GSMBE)

KW - InP/inGaAs

KW - Quantum-well infrared photodectors (QWIPs)

UR - http://www.scopus.com/inward/record.url?scp=5244244085&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5244244085&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:5244244085

VL - 26

SP - 1376

EP - 1381

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 12

ER -

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