Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm

D. K. Sengupta, S. L. Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, Q. Hartman, H. C. Kuo, S. Thomas, J. Miller, K. C. Hsieh, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, Y. C. Chang, W. Wu, J. Tucker, H. Chen, J. M. GibsonJ. Mazumder, L. Li, H. C. Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 μm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and then characterized by double-crystal x-ray diffraction and cross-sectional transmission electron microscopy. Based upon the structural parameters determined by these methods, the photocurrent response spectra were simulated using a six-band effective bond-orbital model. The theoretical results are in excellent agreement with experimental data. Additional important device characteristics such as dark current, spectral response, and absolute responsivity are also presented.

Original languageEnglish
Pages (from-to)1376-1381
Number of pages6
JournalJournal of Electronic Materials
Volume26
Issue number12
DOIs
Publication statusPublished - Dec 1997
Externally publishedYes

Keywords

  • Gas source molecular beam epitaxy (GSMBE)
  • InP/inGaAs
  • Quantum-well infrared photodectors (QWIPs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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