Growth of epitaxial quality SnS thin films on graphene

W. Wang; K. K. Leung; W. K. Fong; S. F. Wang; Y. Y. Hui; S. P. Lau; C. Surya

doi:10.1109/EDSSC.2012.6482879

Growth of epitaxial quality SnS thin films on graphene

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, S. P. Lau, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 10⁴ cm^-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm²V^-1s^-1 was observed for SnS films on graphene/GaAs(100) substrates.

Original language	English
Title of host publication	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012
DOIs	https://doi.org/10.1109/EDSSC.2012.6482879
Publication status	Published - Dec 1 2012
Externally published	Yes
Event	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 - Bangkok, Thailand Duration: Dec 3 2012 → Dec 5 2012

Publication series

Name	2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

Conference

Conference	2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012
Country	Thailand
City	Bangkok
Period	12/3/12 → 12/5/12

Keywords

molecular beam epitaxy
photovoltaics
SnS
van der Waals Epitaxy

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2012.6482879

Fingerprint Dive into the research topics of 'Growth of epitaxial quality SnS thin films on graphene'. Together they form a unique fingerprint.

Cite this

Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Growth of epitaxial quality SnS thin films on graphene. In 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 [6482879] (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012). https://doi.org/10.1109/EDSSC.2012.6482879

Growth of epitaxial quality SnS thin films on graphene. / Wang, W.; Leung, K. K.; Fong, W. K.; Wang, S. F.; Hui, Y. Y.; Lau, S. P.; Surya, C.

2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012. 2012. 6482879 (2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, W, Leung, KK, Fong, WK, Wang, SF, Hui, YY, Lau, SP & Surya, C 2012, Growth of epitaxial quality SnS thin films on graphene. in 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012., 6482879, 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012, 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012, Bangkok, Thailand, 12/3/12. https://doi.org/10.1109/EDSSC.2012.6482879

@inproceedings{74a30d9fffc2490a98d15fd1501b6f20,

title = "Growth of epitaxial quality SnS thin films on graphene",

abstract = "SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.",

keywords = "molecular beam epitaxy, photovoltaics, SnS, van der Waals Epitaxy",

author = "W. Wang and Leung, {K. K.} and Fong, {W. K.} and Wang, {S. F.} and Hui, {Y. Y.} and Lau, {S. P.} and C. Surya",

note = "Copyright: Copyright 2013 Elsevier B.V., All rights reserved.; 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2012.6482879",

language = "English",

isbn = "9781467356961",

series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",

}

TY - GEN

T1 - Growth of epitaxial quality SnS thin films on graphene

AU - Wang, W.

AU - Leung, K. K.

AU - Fong, W. K.

AU - Wang, S. F.

AU - Hui, Y. Y.

AU - Lau, S. P.

AU - Surya, C.

PY - 2012/12/1

Y1 - 2012/12/1

N2 - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.

AB - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on layered substrates such as graphene and mica. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV. The technique leads to significant improvement in the crystallinity of the films compared to the samples deposited on convention crystalline semiconductors or soda lime glass. The absorption coefficient, α, is of the order of 104 cm-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility of ∼81 cm2V-1s-1 was observed for SnS films on graphene/GaAs(100) substrates.

KW - molecular beam epitaxy

KW - photovoltaics

KW - SnS

KW - van der Waals Epitaxy

UR - http://www.scopus.com/inward/record.url?scp=84875737502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875737502&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2012.6482879

DO - 10.1109/EDSSC.2012.6482879

M3 - Conference contribution

AN - SCOPUS:84875737502

SN - 9781467356961

T3 - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

BT - 2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012

T2 - 2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012

Y2 - 3 December 2012 through 5 December 2012

ER -

Growth of epitaxial quality SnS thin films on graphene

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this