Growth of GaN on porous SiC and GaN substrates

C. K. Inoki, T. S. Kuan, A. Sagar, C. D. Lee, R. M. Feenstra, D. D. Koleske, D. J. Diaz, P. W. Bohn, I. Adesida

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD) to evaluate possible advantage of epitaxy on a porous substrate. For the growth of GaN on porous SiC by PAMBE, transmission electron microscopy (TEM) observations indicate that the exposed SiC surface pores tend to extend into the GaN film as open tubes and to trap Ga droplets. The GaN layers grown on porous templates have fewer threading dislocations originating at the interface, but they have additional defects in the form of half-loop dislocations which act to relieve the strain in the films. For PAMBE of GaN on porous GaN, dislocations existing in the porous seed layer are seen to propagate through the porous layer into the overgrown GaN, resulting in no dislocation reduction. For MOCVD of GaN on porous GaN, the initial regrowth tend to bend laterally the dislocations and enhance their annihilation, resulting in 5-10 × fewer dislocations in the overgrown film.

Original languageEnglish
Pages (from-to)44-47
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume200
Issue number1
DOIs
Publication statusPublished - Nov 2003
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Organic Chemicals
Organic chemicals
Substrates
Plasmas
Chemical vapor deposition
molecular beam epitaxy
Metals
metalorganic chemical vapor deposition
templates
Epitaxial growth
Seed
Transmission electron microscopy
epitaxy
Defects
seeds
traps
tubes
porosity
transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Inoki, C. K., Kuan, T. S., Sagar, A., Lee, C. D., Feenstra, R. M., Koleske, D. D., ... Adesida, I. (2003). Growth of GaN on porous SiC and GaN substrates. Physica Status Solidi (A) Applied Research, 200(1), 44-47. https://doi.org/10.1002/pssa.200303542

Growth of GaN on porous SiC and GaN substrates. / Inoki, C. K.; Kuan, T. S.; Sagar, A.; Lee, C. D.; Feenstra, R. M.; Koleske, D. D.; Diaz, D. J.; Bohn, P. W.; Adesida, I.

In: Physica Status Solidi (A) Applied Research, Vol. 200, No. 1, 11.2003, p. 44-47.

Research output: Contribution to journalArticle

Inoki, CK, Kuan, TS, Sagar, A, Lee, CD, Feenstra, RM, Koleske, DD, Diaz, DJ, Bohn, PW & Adesida, I 2003, 'Growth of GaN on porous SiC and GaN substrates', Physica Status Solidi (A) Applied Research, vol. 200, no. 1, pp. 44-47. https://doi.org/10.1002/pssa.200303542
Inoki CK, Kuan TS, Sagar A, Lee CD, Feenstra RM, Koleske DD et al. Growth of GaN on porous SiC and GaN substrates. Physica Status Solidi (A) Applied Research. 2003 Nov;200(1):44-47. https://doi.org/10.1002/pssa.200303542
Inoki, C. K. ; Kuan, T. S. ; Sagar, A. ; Lee, C. D. ; Feenstra, R. M. ; Koleske, D. D. ; Diaz, D. J. ; Bohn, P. W. ; Adesida, I. / Growth of GaN on porous SiC and GaN substrates. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 200, No. 1. pp. 44-47.
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