Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation

H. F. Lui, K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We report on the growth of high quality Cu2ZnSnS4 (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.

Original languageEnglish
Title of host publicationProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages1977-1981
Number of pages5
DOIs
Publication statusPublished - Dec 20 2010
Externally publishedYes
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: Jun 20 2010Jun 25 2010

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CountryUnited States
CityHonolulu, HI
Period6/20/106/25/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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