Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation

H. F. Lui; K. K. Leung; W. K. Fong; C. Surya

doi:10.1109/PVSC.2010.5616592

Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation

H. F. Lui, K. K. Leung, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We report on the growth of high quality Cu₂ZnSnS₄ (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	1977-1981
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2010.5616592
Publication status	Published - Dec 20 2010
Externally published	Yes
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: Jun 20 2010 → Jun 25 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country	United States
City	Honolulu, HI
Period	6/20/10 → 6/25/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/PVSC.2010.5616592

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Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation. / Lui, H. F.; Leung, K. K.; Fong, W. K.; Surya, C.

Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 1977-1981 5616592 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lui, HF, Leung, KK, Fong, WK & Surya, C 2010, Growth of high quality Cu2ZnSnS4 thin films on GaN by co-evaporation. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5616592, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 1977-1981, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 6/20/10. https://doi.org/10.1109/PVSC.2010.5616592

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abstract = "We report on the growth of high quality Cu2ZnSnS4 (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.",

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N2 - We report on the growth of high quality Cu2ZnSnS4 (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.

AB - We report on the growth of high quality Cu2ZnSnS4 (CZTS) thin films on GaN-on-sapphire (GOS) substrates by thermal co-evaporation. Structural characterization was performed by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The results are compared to films grown by thermal co-evaporation on glass and those synthesized by the sulfurization of stacked precursors on glass. Our results show that single phase epitaxial quality CZTS films with improved crystallinity can be grown on GOS substrates. The optical and electrical properties such as optical transmission, carrier concentration and Hall mobilities of the films are also reported.

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