Abstract
SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.
| Original language | English |
|---|---|
| Title of host publication | ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings |
| DOIs | |
| Publication status | Published - Dec 1 2012 |
| Externally published | Yes |
| Event | 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: Oct 29 2012 → Nov 1 2012 |
Conference
| Conference | 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 |
|---|---|
| Country | China |
| City | Xi'an |
| Period | 10/29/12 → 11/1/12 |
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ASJC Scopus subject areas
- Human-Computer Interaction
- Electrical and Electronic Engineering
Cite this
Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. / Wang, W.; Leung, K. K.; Fong, W. K.; Wang, S. F.; Hui, Y. Y.; Lau, S. P.; Surya, C.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467666.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications
AU - Wang, W.
AU - Leung, K. K.
AU - Fong, W. K.
AU - Wang, S. F.
AU - Hui, Y. Y.
AU - Lau, S. P.
AU - Surya, C.
PY - 2012/12/1
Y1 - 2012/12/1
N2 - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.
AB - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.
UR - http://www.scopus.com/inward/record.url?scp=84874925011&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874925011&partnerID=8YFLogxK
U2 - 10.1109/ICSICT.2012.6467666
DO - 10.1109/ICSICT.2012.6467666
M3 - Conference contribution
SN - 9781467324724
BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ER -