Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

W. Wang; K. K. Leung; W. K. Fong; S. F. Wang; Y. Y. Hui; S. P. Lau; C. Surya

doi:10.1109/ICSICT.2012.6467666

Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, S. P. Lau, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 10⁴cm ^-1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm²V^-1s ^-1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467666
Publication status	Published - Dec 1 2012
Externally published	Yes
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: Oct 29 2012 → Nov 1 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country	China
City	Xi'an
Period	10/29/12 → 11/1/12

ASJC Scopus subject areas

Human-Computer Interaction
Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2012.6467666

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Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings [6467666] (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467666

Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. / Wang, W.; Leung, K. K.; Fong, W. K.; Wang, S. F.; Hui, Y. Y.; Lau, S. P.; Surya, C.

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467666 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, W, Leung, KK, Fong, WK, Wang, SF, Hui, YY, Lau, SP & Surya, C 2012, Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467666, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 10/29/12. https://doi.org/10.1109/ICSICT.2012.6467666

Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP et al. Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467666. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467666

Wang, W. ; Leung, K. K. ; Fong, W. K. ; Wang, S. F. ; Hui, Y. Y. ; Lau, S. P. ; Surya, C. / Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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abstract = "SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.",

author = "W. Wang and Leung, {K. K.} and Fong, {W. K.} and Wang, {S. F.} and Hui, {Y. Y.} and Lau, {S. P.} and C. Surya",

note = "Copyright: Copyright 2013 Elsevier B.V., All rights reserved.; 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

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AU - Wang, W.

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AU - Hui, Y. Y.

AU - Lau, S. P.

AU - Surya, C.

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AB - SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.

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