Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications

W. Wang, K. K. Leung, W. K. Fong, S. F. Wang, Y. Y. Hui, S. P. Lau, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient, α, is of the order of 104cm -1 with sharp cutoff in energy indicating low concentration of bandgap states. Hole mobility as high as 81 cm2V-1s -1 was observed for SnS films on graphene/GaAs(100) substrates. The layered structure and chemically saturated bonds for SnS and the graphene buffer layer stipulate that the interaction at the interface is dominated by vdW force. This significantly enhances the tolerance in the lattice mismatch leading the improvement in the crystallinity of the film.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
Publication statusPublished - Dec 1 2012
Externally publishedYes
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: Oct 29 2012Nov 1 2012

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period10/29/1211/1/12

Fingerprint

Buffer layers
Graphene
Energy gap
Lattice mismatch
Hole mobility
Full width at half maximum
Molecular beam epitaxy
Crystals
Substrates

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

Cite this

Wang, W., Leung, K. K., Fong, W. K., Wang, S. F., Hui, Y. Y., Lau, S. P., & Surya, C. (2012). Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings [6467666] https://doi.org/10.1109/ICSICT.2012.6467666

Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. / Wang, W.; Leung, K. K.; Fong, W. K.; Wang, S. F.; Hui, Y. Y.; Lau, S. P.; Surya, C.

ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, W, Leung, KK, Fong, WK, Wang, SF, Hui, YY, Lau, SP & Surya, C 2012, Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467666, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 10/29/12. https://doi.org/10.1109/ICSICT.2012.6467666
Wang W, Leung KK, Fong WK, Wang SF, Hui YY, Lau SP et al. Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467666 https://doi.org/10.1109/ICSICT.2012.6467666
Wang, W. ; Leung, K. K. ; Fong, W. K. ; Wang, S. F. ; Hui, Y. Y. ; Lau, S. P. ; Surya, C. / Growth of high quality SnS van der Waals epitaxies on graphene buffer layer for photovoltaic applications. ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012.
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