Growth of highly textured SnS on mica using an SnSe buffer layer

S. F. Wang, W. K. Fong, W. Wang, C. Surya

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer.

Original languageEnglish
Pages (from-to)206-212
Number of pages7
JournalThin Solid Films
Volume564
DOIs
Publication statusPublished - Aug 1 2014
Externally publishedYes

Fingerprint

Mica
Buffer layers
mica
buffers
Epilayers
Nucleation
nucleation
Thin films
Substrates
noise measurement
thin films
Full width at half maximum
Molecular beam epitaxy
molecular beam epitaxy
textures
Textures
Diffraction
alignment
traps
low frequencies

Keywords

  • Buffer layer
  • Low-frequency noise
  • Mica
  • Nucleation
  • Tin selenide
  • Tin sulfide
  • van der Waals epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Growth of highly textured SnS on mica using an SnSe buffer layer. / Wang, S. F.; Fong, W. K.; Wang, W.; Surya, C.

In: Thin Solid Films, Vol. 564, 01.08.2014, p. 206-212.

Research output: Contribution to journalArticle

Wang, S. F. ; Fong, W. K. ; Wang, W. ; Surya, C. / Growth of highly textured SnS on mica using an SnSe buffer layer. In: Thin Solid Films. 2014 ; Vol. 564. pp. 206-212.
@article{d5016019995f4313afbf7afc6cfc442b,
title = "Growth of highly textured SnS on mica using an SnSe buffer layer",
abstract = "We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer.",
keywords = "Buffer layer, Low-frequency noise, Mica, Nucleation, Tin selenide, Tin sulfide, van der Waals epitaxy",
author = "Wang, {S. F.} and Fong, {W. K.} and W. Wang and C. Surya",
year = "2014",
month = "8",
day = "1",
doi = "10.1016/j.tsf.2014.06.010",
language = "English",
volume = "564",
pages = "206--212",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Growth of highly textured SnS on mica using an SnSe buffer layer

AU - Wang, S. F.

AU - Fong, W. K.

AU - Wang, W.

AU - Surya, C.

PY - 2014/8/1

Y1 - 2014/8/1

N2 - We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer.

AB - We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ∼ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer.

KW - Buffer layer

KW - Low-frequency noise

KW - Mica

KW - Nucleation

KW - Tin selenide

KW - Tin sulfide

KW - van der Waals epitaxy

UR - http://www.scopus.com/inward/record.url?scp=84904044651&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904044651&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.06.010

DO - 10.1016/j.tsf.2014.06.010

M3 - Article

VL - 564

SP - 206

EP - 212

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -