Growth of ZnO:Al by atomic layer deposition: Deconvoluting the contribution of hydrogen interstitials and crystallographic texture on the conductivity

O. Mauit, D. Caffrey, Ardak Ainabayev, Aitkazy Kaisha, O. Toktarbaiuly, Yerzhigit Sugurbekov, Gulnar Sugurbekova, Igor V. Shvets, Karsten Fleischer

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Aluminium doped ZnO (AZO) is an interesting low cost transparent conducting oxide with further use as an inorganic transport layer in multilayer solar cells. Here we present our work on atomic layer deposited (ALD) thin films where, with optimised growth conditions, we can obtain resistivities of 1 × 10−3 Ωcm even in 50–80 nm thin films grown at low temperatures (250 °C). We discuss the influence of crystallographic texture for ALD grown films by comparing plain glass, c-plane Al2O3, and a-plane Al2O3 substrates. We show that the doping mechanism in ALD grown AZO is more complex than for e.g. sputtered material as a substantial hydrogen interstitial related background doping occurs. We compare results from as grown samples with those briefly annealed at 320 °C in nitrogen. This process leads to an increased Hall mobility due to improved grain boundary passivation, but reduced carrier concentration due to partial loss of hydrogen interstitials.

Original languageEnglish
Article number137533
JournalThin Solid Films
Volume690
DOIs
Publication statusPublished - Nov 30 2019

Keywords

  • Aluminium doped zinc oxide
  • Atomic layer deposition
  • Crystallographic texture
  • Hydrogen
  • Transparent conducting oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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