Heterojunction photodiode on cleaved SiC

Mykhailo M. Solovan, John Farah, Taras T. Kovaliuk, Viktor V. Brus, Andrii I. Mostovyi, Eduard V. Maistruk, Pavlo D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.

Original languageEnglish
Title of host publicationThirteenth International Conference on Correlation Optics
EditorsOleg V. Angelsky
PublisherSPIE
ISBN (Electronic)9781510617278
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event13th International Conference on Correlation Optics - Chernivtsi, Ukraine
Duration: Sep 11 2017Sep 15 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10612
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference13th International Conference on Correlation Optics
CountryUkraine
CityChernivtsi
Period9/11/179/15/17

Keywords

  • Current transport mechanisms
  • Graphite
  • Ohmic contacts
  • Shottky diodes
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Heterojunction photodiode on cleaved SiC'. Together they form a unique fingerprint.

Cite this