@inproceedings{301fe7f423c2492387f38f93aa785af7,
title = "Heterojunction photodiode on cleaved SiC",
abstract = "Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.",
keywords = "Current transport mechanisms, Graphite, Ohmic contacts, Shottky diodes, SiC",
author = "Solovan, {Mykhailo M.} and John Farah and Kovaliuk, {Taras T.} and Brus, {Viktor V.} and Mostovyi, {Andrii I.} and Maistruk, {Eduard V.} and Maryanchuk, {Pavlo D.}",
year = "2018",
doi = "10.1117/12.2304818",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Angelsky, {Oleg V.}",
booktitle = "Thirteenth International Conference on Correlation Optics",
address = "United States",
note = "13th International Conference on Correlation Optics ; Conference date: 11-09-2017 Through 15-09-2017",
}