Heterojunction photodiode on cleaved SiC

Mykhailo M. Solovan, John Farah, Taras T. Kovaliuk, Viktor V. Brus, Andrii I. Mostovyi, Eduard V. Maistruk, Pavlo D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.

Original languageEnglish
Title of host publicationThirteenth International Conference on Correlation Optics
EditorsOleg V. Angelsky
ISBN (Electronic)9781510617278
Publication statusPublished - 2018
Externally publishedYes
Event13th International Conference on Correlation Optics - Chernivtsi, Ukraine
Duration: Sep 11 2017Sep 15 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


Conference13th International Conference on Correlation Optics


  • Current transport mechanisms
  • Graphite
  • Ohmic contacts
  • Shottky diodes
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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