High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications

W. E. Hoke, R. E. Leoni, C. S. Whelan, P. F. Marsh, J. H. Jang, I. Adesida, A. M. Joshi, X. Wang

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.

Original languageEnglish
Pages (from-to)1209-1212
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
Publication statusPublished - May 1 2002
Externally publishedYes
Event20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
Duration: Oct 1 2001Oct 3 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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