High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers

Candidates for fiber-optic communications

W. E. Hoke, R. E. Leoni, C. S. Whelan, P. F. Marsh, J. H. Jang, I. Adesida, A. M. Joshi, X. Wang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.

Original languageEnglish
Pages (from-to)1209-1212
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number3
DOIs
Publication statusPublished - May 2002
Externally publishedYes

Fingerprint

hatches
transistor amplifiers
Hatches
Operational amplifiers
High electron mobility transistors
Photodetectors
Photodiodes
high electron mobility transistors
Molecular beam epitaxy
Fiber optics
photodiodes
Surface morphology
photometers
fiber optics
Atomic force microscopy
surface roughness
Microscopes
molecular beam epitaxy
amplifiers
Surface roughness

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers : Candidates for fiber-optic communications. / Hoke, W. E.; Leoni, R. E.; Whelan, C. S.; Marsh, P. F.; Jang, J. H.; Adesida, I.; Joshi, A. M.; Wang, X.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 1209-1212.

Research output: Contribution to journalArticle

@article{3700ca0273324214b0a37d889a57244a,
title = "High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications",
abstract = "Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.",
author = "Hoke, {W. E.} and Leoni, {R. E.} and Whelan, {C. S.} and Marsh, {P. F.} and Jang, {J. H.} and I. Adesida and Joshi, {A. M.} and X. Wang",
year = "2002",
month = "5",
doi = "10.1116/1.1470516",
language = "English",
volume = "20",
pages = "1209--1212",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers

T2 - Candidates for fiber-optic communications

AU - Hoke, W. E.

AU - Leoni, R. E.

AU - Whelan, C. S.

AU - Marsh, P. F.

AU - Jang, J. H.

AU - Adesida, I.

AU - Joshi, A. M.

AU - Wang, X.

PY - 2002/5

Y1 - 2002/5

N2 - Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.

AB - Metamorphic films were grown on GaAs substrates by solid source molecular-beam epitaxy for optical p-i-n photodetectors and transimpedance amplifiers. The surface roughness was studied using atomic force microscopy. The surface morphologies of the completed device structures were found to be specular to the eye. They also exhibited the characteristic cross-hatch pattern of metamorphic growth under Nomarski microscope contrast.

UR - http://www.scopus.com/inward/record.url?scp=0035998587&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035998587&partnerID=8YFLogxK

U2 - 10.1116/1.1470516

DO - 10.1116/1.1470516

M3 - Article

VL - 20

SP - 1209

EP - 1212

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

ER -