High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs

J. Laskar, J. Kolodzey, S. Boor, K. C. Hsieh, S. Kalem, S. Caracci, A. A. Ketterson, T. Brock, I. Adesida, D. Sivco, A. Y. Cho

Research output: Contribution to journalArticle

Abstract

We report on the electrical and microstructural properties of InP/GaxIn 1 -xAs/Al0.48In0.52As modulation doped layers having compositionally graded active channels with different channel thicknesses. The layers were grown by solid source molecular beam epitaxy on Fe-doped InP substrates. The undoped GaInAs two dimensional electron gas channel layers were grown having indium compositions graded from x = 0.53 at the substrate buffer to x= 0.65 at the heterointerface by varying the Ga cell temperature during growth. Active channel thicknesses of 20 nm and 30 nm were compared with lattice matched layers. Transmission electron microscope image analysis indicates no misfit dislocations in these structures. Hall-effect measurements at 300 K show an increase in the mobility from 8,380 cm2/Vs for the lattice matched layer to 12,500 cm2/Vs for the 30 nm pseudomorphic layer. Small gate-length, 0.25 μn, MODFETs were fabricated to determine effective velocity values from transconductance (g m ) and current gain (h 21 ) measurements. The peak dc extrinsic g m increased from 367 mS/mm for the lattice matched layer to 668 mS/mm for the 30 nm pseudomorphic layer. The effective electron carrier velocity increased from 1.57 × 107 cm/s for the lattice matched layer to 1.88 × 107 cm/s for the 30 nm pseudomorphic layer. Our results show that compositional grading is a useful technique to obtain thick pseudomorphic layers with good transport properties.

Original languageEnglish
Pages (from-to)249-252
Number of pages4
JournalJournal of Electronic Materials
Volume19
Issue number3
DOIs
Publication statusPublished - Mar 1990
Externally publishedYes

Fingerprint

Indium
High electron mobility transistors
indium
Two dimensional electron gas
Hall effect
Transconductance
Growth temperature
Substrates
Dislocations (crystals)
Molecular beam epitaxy
Transport properties
Image analysis
Buffers
Electron microscopes
Modulation
Electrons
Chemical analysis
transconductance
image analysis
electron gas

Keywords

  • GaInAs/AlInAs
  • MODFETs
  • molecular beam epitaxy
  • Pseudomorphic

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Laskar, J., Kolodzey, J., Boor, S., Hsieh, K. C., Kalem, S., Caracci, S., ... Cho, A. Y. (1990). High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs. Journal of Electronic Materials, 19(3), 249-252. https://doi.org/10.1007/BF02733814

High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs. / Laskar, J.; Kolodzey, J.; Boor, S.; Hsieh, K. C.; Kalem, S.; Caracci, S.; Ketterson, A. A.; Brock, T.; Adesida, I.; Sivco, D.; Cho, A. Y.

In: Journal of Electronic Materials, Vol. 19, No. 3, 03.1990, p. 249-252.

Research output: Contribution to journalArticle

Laskar, J, Kolodzey, J, Boor, S, Hsieh, KC, Kalem, S, Caracci, S, Ketterson, AA, Brock, T, Adesida, I, Sivco, D & Cho, AY 1990, 'High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs', Journal of Electronic Materials, vol. 19, no. 3, pp. 249-252. https://doi.org/10.1007/BF02733814
Laskar J, Kolodzey J, Boor S, Hsieh KC, Kalem S, Caracci S et al. High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs. Journal of Electronic Materials. 1990 Mar;19(3):249-252. https://doi.org/10.1007/BF02733814
Laskar, J. ; Kolodzey, J. ; Boor, S. ; Hsieh, K. C. ; Kalem, S. ; Caracci, S. ; Ketterson, A. A. ; Brock, T. ; Adesida, I. ; Sivco, D. ; Cho, A. Y. / High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs. In: Journal of Electronic Materials. 1990 ; Vol. 19, No. 3. pp. 249-252.
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