High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

W. K. Fong, C. F. Zhu, B. H. Leung, C. Surya

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

High-mobility GaN thin films were grown by RF plasma-assisted molecular beam epitaxy on (0001) sapphire. A conventional low-temperature buffer layer and an intermediate-temperature buffer layer (ITBL) were first deposited before the growth of the epitaxial layer. Electron mobility is found to vary strongly with the ITBL thickness with value as high as 460cm2V-1s-1 obtained from the sample grown on a 800nm ITBL on top of a low-temperature buffer layer. A systematic shift in the photoluminescence peak position, following the same trend as the mobility, suggests the relaxation of residual strain in the top GaN epitaxial layer by utilizing an ITBL. Detailed characterizations of G-R noise indicate reduction of deep levels by over an order of magnitude for the sample with 800nm ITBL compared to the control sample which has the same total thickness but with only the low-temperature buffer layer.

Original languageEnglish
Pages (from-to)431-438
Number of pages8
JournalJournal of Crystal Growth
Volume233
Issue number3
DOIs
Publication statusPublished - Dec 1 2001
Externally publishedYes

Fingerprint

Epilayers
Buffer layers
Molecular beam epitaxy
molecular beam epitaxy
buffers
Plasmas
Temperature
temperature
Epitaxial layers
Aluminum Oxide
Electron mobility
Noise abatement
Sapphire
Photoluminescence
noise reduction
electron mobility
sapphire
Thin films
photoluminescence
trends

Keywords

  • A3. molecular beam epitaxy
  • B1. nitrides
  • B2. semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer. / Fong, W. K.; Zhu, C. F.; Leung, B. H.; Surya, C.

In: Journal of Crystal Growth, Vol. 233, No. 3, 01.12.2001, p. 431-438.

Research output: Contribution to journalArticle

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