High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's

Wu Lu, Almaz Kuliev, Steven J. Koester, Xie Wen Wang, Jack O. Chu, Tso Ping Ma, Ilesanmi Adesida

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide semiconductor MODFET (MOS-MODFET) with 0.1 μm gate-length have been fabricated on a high hole mobility SiGe/Si heterojunction grown by ultrahigh vacuum chemical vapor deposition. The MODFET devices exhibited an extrinsic transconductance (g m) of 142 mS/mm, a unity current gain cut-off frequency (f T) of 45 GHz and a maximum oscillation frequency (f MAX) of 81 GHz. 5 nm-thick high quality jet-vapor-deposited (JVD) SiO 2 was utilized as gate dielectric for the MOS-MODFET's. The devices exhibited a lower gate leakage current (1 nA/μm at V gs = 6 V) and a wider gate operating voltage swing in comparison to the MODFET's. However, due to the larger gate-to-channel distance and the existence of a parasitic surface channel, MOS-MODFET's demonstrated a smaller peak g m of 90 mS/mm, f T of 38 GHz, and f MAX of 64 GHz. The threshold voltage shifted from 0.45 V for MODFET's to 1.33 V for MOS-MODFET's. A minimum noise figure (NF min) of 1.29 dB and an associated power gain (G a) of 12.8 dB were measured at 2 GHz for MODFET's, while the MOS-MODFET's exhibited a NF min of 0.92 dB and a G a of 12 dB at 2 GHz. These dc, rf, and high frequency noise characteristics make SiGe/Si MODFET's and MOS-MODFET's excellent candidates for wireless communications.

Original languageEnglish
Pages (from-to)1645-1652
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume47
Issue number8
DOIs
Publication statusPublished - Aug 2000
Externally publishedYes

Fingerprint

Gates (transistor)
High electron mobility transistors
metal oxide semiconductors
field effect transistors
Metals
modulation
Oxide semiconductors
vapor jets
power gain
Hole mobility
Gate dielectrics
hole mobility
Noise figure
Cutoff frequency
wireless communication
Transconductance
Ultrahigh vacuum
transconductance
Threshold voltage
Leakage currents

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's. / Lu, Wu; Kuliev, Almaz; Koester, Steven J.; Wang, Xie Wen; Chu, Jack O.; Ma, Tso Ping; Adesida, Ilesanmi.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 8, 08.2000, p. 1645-1652.

Research output: Contribution to journalArticle

Lu, Wu ; Kuliev, Almaz ; Koester, Steven J. ; Wang, Xie Wen ; Chu, Jack O. ; Ma, Tso Ping ; Adesida, Ilesanmi. / High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's. In: IEEE Transactions on Electron Devices. 2000 ; Vol. 47, No. 8. pp. 1645-1652.
@article{5d837b9d282e4942ba36e5449a1bd9cd,
title = "High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's",
abstract = "High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide semiconductor MODFET (MOS-MODFET) with 0.1 μm gate-length have been fabricated on a high hole mobility SiGe/Si heterojunction grown by ultrahigh vacuum chemical vapor deposition. The MODFET devices exhibited an extrinsic transconductance (g m) of 142 mS/mm, a unity current gain cut-off frequency (f T) of 45 GHz and a maximum oscillation frequency (f MAX) of 81 GHz. 5 nm-thick high quality jet-vapor-deposited (JVD) SiO 2 was utilized as gate dielectric for the MOS-MODFET's. The devices exhibited a lower gate leakage current (1 nA/μm at V gs = 6 V) and a wider gate operating voltage swing in comparison to the MODFET's. However, due to the larger gate-to-channel distance and the existence of a parasitic surface channel, MOS-MODFET's demonstrated a smaller peak g m of 90 mS/mm, f T of 38 GHz, and f MAX of 64 GHz. The threshold voltage shifted from 0.45 V for MODFET's to 1.33 V for MOS-MODFET's. A minimum noise figure (NF min) of 1.29 dB and an associated power gain (G a) of 12.8 dB were measured at 2 GHz for MODFET's, while the MOS-MODFET's exhibited a NF min of 0.92 dB and a G a of 12 dB at 2 GHz. These dc, rf, and high frequency noise characteristics make SiGe/Si MODFET's and MOS-MODFET's excellent candidates for wireless communications.",
author = "Wu Lu and Almaz Kuliev and Koester, {Steven J.} and Wang, {Xie Wen} and Chu, {Jack O.} and Ma, {Tso Ping} and Ilesanmi Adesida",
year = "2000",
month = "8",
doi = "10.1109/16.853043",
language = "English",
volume = "47",
pages = "1645--1652",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's

AU - Lu, Wu

AU - Kuliev, Almaz

AU - Koester, Steven J.

AU - Wang, Xie Wen

AU - Chu, Jack O.

AU - Ma, Tso Ping

AU - Adesida, Ilesanmi

PY - 2000/8

Y1 - 2000/8

N2 - High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide semiconductor MODFET (MOS-MODFET) with 0.1 μm gate-length have been fabricated on a high hole mobility SiGe/Si heterojunction grown by ultrahigh vacuum chemical vapor deposition. The MODFET devices exhibited an extrinsic transconductance (g m) of 142 mS/mm, a unity current gain cut-off frequency (f T) of 45 GHz and a maximum oscillation frequency (f MAX) of 81 GHz. 5 nm-thick high quality jet-vapor-deposited (JVD) SiO 2 was utilized as gate dielectric for the MOS-MODFET's. The devices exhibited a lower gate leakage current (1 nA/μm at V gs = 6 V) and a wider gate operating voltage swing in comparison to the MODFET's. However, due to the larger gate-to-channel distance and the existence of a parasitic surface channel, MOS-MODFET's demonstrated a smaller peak g m of 90 mS/mm, f T of 38 GHz, and f MAX of 64 GHz. The threshold voltage shifted from 0.45 V for MODFET's to 1.33 V for MOS-MODFET's. A minimum noise figure (NF min) of 1.29 dB and an associated power gain (G a) of 12.8 dB were measured at 2 GHz for MODFET's, while the MOS-MODFET's exhibited a NF min of 0.92 dB and a G a of 12 dB at 2 GHz. These dc, rf, and high frequency noise characteristics make SiGe/Si MODFET's and MOS-MODFET's excellent candidates for wireless communications.

AB - High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide semiconductor MODFET (MOS-MODFET) with 0.1 μm gate-length have been fabricated on a high hole mobility SiGe/Si heterojunction grown by ultrahigh vacuum chemical vapor deposition. The MODFET devices exhibited an extrinsic transconductance (g m) of 142 mS/mm, a unity current gain cut-off frequency (f T) of 45 GHz and a maximum oscillation frequency (f MAX) of 81 GHz. 5 nm-thick high quality jet-vapor-deposited (JVD) SiO 2 was utilized as gate dielectric for the MOS-MODFET's. The devices exhibited a lower gate leakage current (1 nA/μm at V gs = 6 V) and a wider gate operating voltage swing in comparison to the MODFET's. However, due to the larger gate-to-channel distance and the existence of a parasitic surface channel, MOS-MODFET's demonstrated a smaller peak g m of 90 mS/mm, f T of 38 GHz, and f MAX of 64 GHz. The threshold voltage shifted from 0.45 V for MODFET's to 1.33 V for MOS-MODFET's. A minimum noise figure (NF min) of 1.29 dB and an associated power gain (G a) of 12.8 dB were measured at 2 GHz for MODFET's, while the MOS-MODFET's exhibited a NF min of 0.92 dB and a G a of 12 dB at 2 GHz. These dc, rf, and high frequency noise characteristics make SiGe/Si MODFET's and MOS-MODFET's excellent candidates for wireless communications.

UR - http://www.scopus.com/inward/record.url?scp=0034248273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034248273&partnerID=8YFLogxK

U2 - 10.1109/16.853043

DO - 10.1109/16.853043

M3 - Article

VL - 47

SP - 1645

EP - 1652

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -