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Dive into the research topics of 'High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's'. Together they form a unique fingerprint.
Chemical Compounds
Gates (transistor)
Oxide semiconductors
High electron mobility transistors
Metals
Hole mobility
Ultrahigh vacuum
Gate dielectrics
Heterojunctions
Transconductance
Chemical vapor deposition
Cutoff frequency
Noise figure
Threshold voltage
Leakage currents
Vapors
Engineering & Materials Science
Gates (transistor)
Oxide semiconductors
High electron mobility transistors
Metals
Hole mobility
Ultrahigh vacuum
Gate dielectrics
Heterojunctions
Transconductance
Chemical vapor deposition
Cutoff frequency
Noise figure
Threshold voltage
Leakage currents
Vapors
Physics & Astronomy
metal oxide semiconductors
field effect transistors
modulation
performance
vapor jets
power gain
wireless communication
hole mobility
transconductance
ultrahigh vacuum
threshold voltage
unity
heterojunctions