High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETS

I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, the dc and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 μm T-gates fabricate in OMVPE-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, gm, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, fT, of 187 GHz are shown. To date, this is the highest fT reported for OMVPE-grown MODFETs.

Original languageEnglish
Title of host publication1993 IEEE 5th International Conference on Indium Phosphide and Related Materials
PublisherPubl by IEEE
Pages405-408
Number of pages4
ISBN (Print)0780309944
Publication statusPublished - Jan 1 1993
Externally publishedYes
Event1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr
Duration: Apr 19 1993Apr 22 1993

Publication series

Name1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Other

Other1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
CityParis, Fr
Period4/19/934/22/93

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Adesida, I., Nummila, K., Tong, M., Caneau, C., & Bhat, R. (1993). High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETS. In 1993 IEEE 5th International Conference on Indium Phosphide and Related Materials (pp. 405-408). (1993 IEEE 5th International Conference on Indium Phosphide and Related Materials). Publ by IEEE.