High performance 0.15 μm recessed gate AlGaN/GaN HEMTs on sapphire

V. Kumar, W. Lu, F. A. Khan, R. Schwindt, A. Kuliev, J. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Using ICP-RIE, recessed 0.15 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 0.15 μm gate-length devices exhibited maximum drain current density as high as 1.31 A/mm, record high extrinsic transconductance of 402 mS/mm, unity gain cut-off frequency (fT) of 107 GHz, and maximum frequency of oscillation (fmax) of 148 GHz. The fT of 107 GHz is the highest reported value for similar gate-length GaN-based HEMTs.

Original languageEnglish
Pages (from-to)573-576
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 2001
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: Dec 2 2001Dec 5 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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