High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

W. Lu, R. Hammond, S. J. Koester, X. W. Wang, J. O. Chu, T. P. Ma, I. Adesida

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at Vgs = 3 V and Vds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of Vds = -0.75 V and Vgs = 0.4 V.

Original languageEnglish
Pages (from-to)577-580
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: Dec 5 1999Dec 8 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric'. Together they form a unique fingerprint.

  • Cite this