High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

W. Lu, R. Hammond, S. J. Koester, X. W. Wang, J. O. Chu, T. P. Ma, I. Adesida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Using jet-vapor-deposited silicon nitride as gate dielectric, self-aligned p-type SiGe metal-oxide-semiconductor modulated-doped field effect transistors are fabricated. For a 0.15 μm gate-length device, the gate leakage current is as low as 0.46 nA/μm at Vgs = 3 V and Vds = -50 mV. A maximum extrinsic transconductance of 305 mS/mm, a unity current gain cut-off frequency of 62 GHz, and a maximum oscillation frequency of 68 GHz are measured at low operating biases of Vds = -0.75 V and Vgs = 0.4 V.

Original languageEnglish
Pages (from-to)577-580
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Gate dielectrics
Cutoff frequency
Transconductance
High electron mobility transistors
Field effect transistors
Silicon nitride
Leakage currents
Metals
Vapors
vapor jets
p-type semiconductors
transconductance
silicon nitrides
metal oxide semiconductors
unity
leakage
cut-off
field effect transistors
oscillations
Oxide semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric. / Lu, W.; Hammond, R.; Koester, S. J.; Wang, X. W.; Chu, J. O.; Ma, T. P.; Adesida, I.

In: Technical Digest - International Electron Devices Meeting, 1999, p. 577-580.

Research output: Contribution to journalArticle

Lu, W. ; Hammond, R. ; Koester, S. J. ; Wang, X. W. ; Chu, J. O. ; Ma, T. P. ; Adesida, I. / High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric. In: Technical Digest - International Electron Devices Meeting. 1999 ; pp. 577-580.
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AU - Chu, J. O.

AU - Ma, T. P.

AU - Adesida, I.

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