High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric

W. Lu, R. Hammond, S. J. Koester, X. W. Wang, J. O. Chu, T. P. Ma, I. Adesida

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Fingerprint Dive into the research topics of 'High performance 0.15 μm self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy