High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz

V. Kumar, J. W. Lee, A. Kuliev, O. Aktas, R. Schwindt, R. Birkhahn, D. Gotthold, S. Guo, B. Albert, I. Adesida

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Abstract

MOCVD-grown 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.28 A/mm, peak extrinsic transconductance of 310 mS/mm, unity current gain cutoff frequency (fT) of 51 GHz, and maximum frequency of oscillation (fmax) of 115 GHz. At 18 GHz, a continuous-wave output power density of 6.7 W/mm with power-added efficiency of 26.6% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMTs at 18 GHz.

Original languageEnglish
Pages (from-to)1609-1611
Number of pages3
JournalElectronics Letters
Volume39
Issue number22
DOIs
Publication statusPublished - Nov 22 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kumar, V., Lee, J. W., Kuliev, A., Aktas, O., Schwindt, R., Birkhahn, R., Gotthold, D., Guo, S., Albert, B., & Adesida, I. (2003). High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz. Electronics Letters, 39(22), 1609-1611. https://doi.org/10.1049/el:20030985