High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz

V. Kumar, J. W. Lee, A. Kuliev, O. Aktas, R. Schwindt, R. Birkhahn, D. Gotthold, S. Guo, B. Albert, I. Adesida

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Engineering & Materials Science