High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

V. Kumar, W. Lu, F. A. Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida

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18 Citations (Scopus)

Abstract

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (fT) of 85 GHz. and maximum frequency of oscillation (fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs.

Original languageEnglish
Pages (from-to)252-253
Number of pages2
JournalElectronics Letters
Volume38
Issue number5
DOIs
Publication statusPublished - Feb 28 2002
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kumar, V., Lu, W., Khan, F. A., Schwindt, R., Kuliev, A., Simin, G., Yang, J., Asif Khan, M., & Adesida, I. (2002). High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm. Electronics Letters, 38(5), 252-253. https://doi.org/10.1049/el:20020178