Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency (fT) of 85 GHz. and maximum frequency of oscillation (fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 μm gate-length GaN-based HEMTs.
ASJC Scopus subject areas
- Electrical and Electronic Engineering