MOCVD-grown 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.43 A/mm, peak extrinsic transconductance of 354 mS/mm, unity current gain cut-off frequency (fT) of 61 GHz, and maximum frequency of oscillation (fmax) of 89 GHz. At 20 GHz, a continuous-wave output power density of 4.65 W/mm with power-added-efficiency of 29.9% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMT grown on sapphire at 20 GHz.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry