High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

V. Kumar, A. Kuliev, R. Schwindt, M. Muir, G. Simin, J. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

MOCVD-grown 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on sapphire substrates. These 0.25 μm gate-length devices exhibited maximum drain current density as high as 1.43 A/mm, peak extrinsic transconductance of 354 mS/mm, unity current gain cut-off frequency (fT) of 61 GHz, and maximum frequency of oscillation (fmax) of 89 GHz. At 20 GHz, a continuous-wave output power density of 4.65 W/mm with power-added-efficiency of 29.9% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMT grown on sapphire at 20 GHz.

Original languageEnglish
Pages (from-to)1577-1580
Number of pages4
JournalSolid-State Electronics
Volume47
Issue number9
DOIs
Publication statusPublished - Sep 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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