Abstract
Doped-channel heterostructure field effect transistors have been fabricated using Al0.2Ga0.8N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (ft), and maximum frequency of oscillation (fmax) of 1.43 A/mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 μm gate length.
Original language | English |
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Pages (from-to) | 561-564 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
Publication status | Published - Dec 1 1997 |
Event | 1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry