High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Doped-channel heterostructure field effect transistors have been fabricated using Al0.2Ga0.8N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (ft), and maximum frequency of oscillation (fmax) of 1.43 A/mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 μm gate length.

Original languageEnglish
Pages (from-to)561-564
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1997
Externally publishedYes

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Organic Chemicals
Organic chemicals
Cutoff frequency
Transconductance
High electron mobility transistors
Heterojunctions
Chemical vapor deposition
field effect transistors
Metals
transconductance
Substrates
metalorganic chemical vapor deposition
unity
cut-off
low pressure
direct current
saturation
oscillations
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "Doped-channel heterostructure field effect transistors have been fabricated using Al0.2Ga0.8N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (ft), and maximum frequency of oscillation (fmax) of 1.43 A/mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 μm gate length.",
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year = "1997",
language = "English",
pages = "561--564",
journal = "Technical Digest - International Electron Devices Meeting",
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T1 - High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

AU - Ping, A. T.

AU - Chen, Q.

AU - Yang, J. W.

AU - Khan, M. Asif

AU - Adesida, I.

PY - 1997

Y1 - 1997

N2 - Doped-channel heterostructure field effect transistors have been fabricated using Al0.2Ga0.8N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (ft), and maximum frequency of oscillation (fmax) of 1.43 A/mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 μm gate length.

AB - Doped-channel heterostructure field effect transistors have been fabricated using Al0.2Ga0.8N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (ft), and maximum frequency of oscillation (fmax) of 1.43 A/mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 μm gate length.

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M3 - Article

SP - 561

EP - 564

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

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