High performance 0.25 μm gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Doped-channel heterostructure field effect transistors have been fabricated using Al0.2Ga0.8N/GaN heterostructures which were grown on p-type SiC substrates by low-pressure metal organic chemical vapor deposition (LP-MOCVD). These devices yielded excellent DC and RF performance with a drain saturation current, extrinsic transconductance, unity current-gain cutoff frequency (ft), and maximum frequency of oscillation (fmax) of 1.43 A/mm, 229 mS/mm, 53 GHz, and 58 GHz, respectively, for a 0.25 μm gate length.

Original languageEnglish
Pages (from-to)561-564
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - Dec 1 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 7 1997Dec 10 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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