High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

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19 Citations (Scopus)


Monolithic integration of enhancement (E)and depletion (D)-mode metamorphic In0.52Al0.48As/In0.53Ga0.47 As/GaAs HEMTs with 0.35 μm gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs substrates using molecular beam epitaxy. A mobility of 9550 cm2/V-s and a sheet density of 1.12 × 1012 cm-2 are achieved at room temperature. Buried Pt-gate was employed for E-mode devices to achieve a positive shift in the threshold voltage. Excellent characteristics are achieved with threshold voltage, maximum drain current, and extrinsic transconductance of 100 mV, 370 mA/mm and 660 mS/mm, respectively for E-mode devices, and -550 mV, 390 mA/mm and 510 mS/mm, respectively for D-mode devices. The unity current gain cutoff frequencies of 75 GHz for E-mode and 80 GHz for D-mode are reported.

Original languageEnglish
Pages (from-to)364-366
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
Publication statusPublished - Aug 1 2001


  • Depletion
  • Enhancement
  • GaAs
  • HEMT
  • InAlAs/InGaAs
  • Metamorphic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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