High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates

D. C. Dumka; W. E. Hoke; P. J. Lemonias; G. Cueva; I. Adesida

doi:10.1109/55.936344

High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In_0.52 Al_0.48As/In_0.53Ga_0.47As HEMTs on GaAs substrates

D. C. Dumka, W. E. Hoke, P. J. Lemonias, G. Cueva, I. Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Monolithic integration of enhancement (E)and depletion (D)-mode metamorphic In_0.52Al_0.48As/In_0.53Ga_0.47 As/GaAs HEMTs with 0.35 μm gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs substrates using molecular beam epitaxy. A mobility of 9550 cm²/V-s and a sheet density of 1.12 × 10¹² cm^-2 are achieved at room temperature. Buried Pt-gate was employed for E-mode devices to achieve a positive shift in the threshold voltage. Excellent characteristics are achieved with threshold voltage, maximum drain current, and extrinsic transconductance of 100 mV, 370 mA/mm and 660 mS/mm, respectively for E-mode devices, and -550 mV, 390 mA/mm and 510 mS/mm, respectively for D-mode devices. The unity current gain cutoff frequencies of 75 GHz for E-mode and 80 GHz for D-mode are reported.

Original language	English
Pages (from-to)	364-366
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	8
DOIs	https://doi.org/10.1109/55.936344
Publication status	Published - Aug 1 2001

Keywords

Depletion
Enhancement
GaAs
HEMT
InAlAs/InGaAs
Metamorphic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.936344

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title = "High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates",

abstract = "Monolithic integration of enhancement (E)and depletion (D)-mode metamorphic In0.52Al0.48As/In0.53Ga0.47 As/GaAs HEMTs with 0.35 μm gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs substrates using molecular beam epitaxy. A mobility of 9550 cm2/V-s and a sheet density of 1.12 × 1012 cm-2 are achieved at room temperature. Buried Pt-gate was employed for E-mode devices to achieve a positive shift in the threshold voltage. Excellent characteristics are achieved with threshold voltage, maximum drain current, and extrinsic transconductance of 100 mV, 370 mA/mm and 660 mS/mm, respectively for E-mode devices, and -550 mV, 390 mA/mm and 510 mS/mm, respectively for D-mode devices. The unity current gain cutoff frequencies of 75 GHz for E-mode and 80 GHz for D-mode are reported.",

keywords = "Depletion, Enhancement, GaAs, HEMT, InAlAs/InGaAs, Metamorphic",

author = "Dumka, {D. C.} and Hoke, {W. E.} and Lemonias, {P. J.} and G. Cueva and I. Adesida",

year = "2001",

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AU - Dumka, D. C.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Cueva, G.

AU - Adesida, I.

PY - 2001/8/1

Y1 - 2001/8/1

N2 - Monolithic integration of enhancement (E)and depletion (D)-mode metamorphic In0.52Al0.48As/In0.53Ga0.47 As/GaAs HEMTs with 0.35 μm gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs substrates using molecular beam epitaxy. A mobility of 9550 cm2/V-s and a sheet density of 1.12 × 1012 cm-2 are achieved at room temperature. Buried Pt-gate was employed for E-mode devices to achieve a positive shift in the threshold voltage. Excellent characteristics are achieved with threshold voltage, maximum drain current, and extrinsic transconductance of 100 mV, 370 mA/mm and 660 mS/mm, respectively for E-mode devices, and -550 mV, 390 mA/mm and 510 mS/mm, respectively for D-mode devices. The unity current gain cutoff frequencies of 75 GHz for E-mode and 80 GHz for D-mode are reported.

AB - Monolithic integration of enhancement (E)and depletion (D)-mode metamorphic In0.52Al0.48As/In0.53Ga0.47 As/GaAs HEMTs with 0.35 μm gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs substrates using molecular beam epitaxy. A mobility of 9550 cm2/V-s and a sheet density of 1.12 × 1012 cm-2 are achieved at room temperature. Buried Pt-gate was employed for E-mode devices to achieve a positive shift in the threshold voltage. Excellent characteristics are achieved with threshold voltage, maximum drain current, and extrinsic transconductance of 100 mV, 370 mA/mm and 660 mS/mm, respectively for E-mode devices, and -550 mV, 390 mA/mm and 510 mS/mm, respectively for D-mode devices. The unity current gain cutoff frequencies of 75 GHz for E-mode and 80 GHz for D-mode are reported.

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