High-performance AlGaN/GaN high electron mobility transistors on SiC

V. Kumar, A. Kuliev, R. Schwindt, G. Simin, J. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12μm gate length have been fabricated. These 0.12μm gate length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. A unity gain cut-off frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured for these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs. Also, a continuous-wave (CW) output power density of 4.2 W/mm with an associated gain of 7.5 dB and a power-added-efficiency (PAE) of 26.4% were obtained at 20 GHz.

Original languageEnglish
Pages (from-to)456-459
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume194
Issue number2 SPEC.
DOIs
Publication statusPublished - Dec 2002
Externally publishedYes

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High electron mobility transistors
high electron mobility transistors
Drain current
Cutoff frequency
Transconductance
power efficiency
transconductance
continuous radiation
radiant flux density
unity
Current density
cut-off
current density
oscillations
output
Substrates
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

High-performance AlGaN/GaN high electron mobility transistors on SiC. / Kumar, V.; Kuliev, A.; Schwindt, R.; Simin, G.; Yang, J.; Asif Khan, M.; Adesida, I.

In: Physica Status Solidi (A) Applied Research, Vol. 194, No. 2 SPEC., 12.2002, p. 456-459.

Research output: Contribution to journalArticle

Kumar, V. ; Kuliev, A. ; Schwindt, R. ; Simin, G. ; Yang, J. ; Asif Khan, M. ; Adesida, I. / High-performance AlGaN/GaN high electron mobility transistors on SiC. In: Physica Status Solidi (A) Applied Research. 2002 ; Vol. 194, No. 2 SPEC. pp. 456-459.
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