AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12μm gate length have been fabricated. These 0.12μm gate length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. A unity gain cut-off frequency (fT) of 121 GHz and maximum frequency of oscillation (fmax) of 162 GHz were measured for these devices. These fT and fmax values are the highest ever reported values for GaN-based HEMTs. Also, a continuous-wave (CW) output power density of 4.2 W/mm with an associated gain of 7.5 dB and a power-added-efficiency (PAE) of 26.4% were obtained at 20 GHz.
|Number of pages||4|
|Journal||Physica Status Solidi (A) Applied Research|
|Issue number||2 SPEC.|
|Publication status||Published - Dec 1 2002|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics