High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP

A. Mahajan, P. Fay, C. Caneau, I. Adesida

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The fabrication of 1.0μm gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched InAlAs/InGaAs/InP material system is reported. Typical device DC chacteristics include a threshold voltage of 275mV, transconductance of 650mS/mm, output conductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an ft of 35GHz and an fmax of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.

Original languageEnglish
Pages (from-to)1037-1038
Number of pages2
JournalElectronics Letters
Volume32
Issue number11
DOIs
Publication statusPublished - May 23 1996
Externally publishedYes

Keywords

  • Carrier mobility
  • High electron mobility transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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