Abstract
This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.
| Original language | English |
|---|---|
| Title of host publication | Annual Device Research Conference Digest |
| Publisher | IEEE |
| Pages | 20-21 |
| Number of pages | 2 |
| Publication status | Published - 1995 |
| Externally published | Yes |
| Event | Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: Jun 19 1995 → Jun 21 1995 |
Other
| Other | Proceedings of the 1995 53rd Annual Device Research Conference Digest |
|---|---|
| City | Charlottesville, VA, USA |
| Period | 6/19/95 → 6/21/95 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
High performance submicron-gate SiGe P-type modulation-doped field-effect transistors. / Arafa, M.; Fay, P.; Ismail, K.; Chu, J. O.; Meyerson, B. S.; Adesida, I.
Annual Device Research Conference Digest. IEEE, 1995. p. 20-21.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High performance submicron-gate SiGe P-type modulation-doped field-effect transistors
AU - Arafa, M.
AU - Fay, P.
AU - Ismail, K.
AU - Chu, J. O.
AU - Meyerson, B. S.
AU - Adesida, I.
PY - 1995
Y1 - 1995
N2 - This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.
AB - This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.
UR - http://www.scopus.com/inward/record.url?scp=0029516773&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029516773&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029516773
SP - 20
EP - 21
BT - Annual Device Research Conference Digest
PB - IEEE
ER -