High performance submicron-gate SiGe P-type modulation-doped field-effect transistors

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Contribution to conferencePaperpeer-review

Abstract

This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.

Original languageEnglish
Pages20-21
Number of pages2
Publication statusPublished - Dec 1 1995
EventProceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA
Duration: Jun 19 1995Jun 21 1995

Other

OtherProceedings of the 1995 53rd Annual Device Research Conference Digest
CityCharlottesville, VA, USA
Period6/19/956/21/95

ASJC Scopus subject areas

  • Engineering(all)

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