High performance submicron-gate SiGe P-type modulation-doped field-effect transistors

M. Arafa; P. Fay; K. Ismail; J. O. Chu; B. S. Meyerson; I. Adesida

High performance submicron-gate SiGe P-type modulation-doped field-effect transistors

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Nazarbayev University

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.

Original language	English
Pages	20-21
Number of pages	2
Publication status	Published - Dec 1 1995
Event	Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: Jun 19 1995 → Jun 21 1995

Other

Other	Proceedings of the 1995 53rd Annual Device Research Conference Digest
City	Charlottesville, VA, USA
Period	6/19/95 → 6/21/95

ASJC Scopus subject areas

Engineering(all)

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title = "High performance submicron-gate SiGe P-type modulation-doped field-effect transistors",

abstract = "This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.",

author = "M. Arafa and P. Fay and K. Ismail and Chu, {J. O.} and Meyerson, {B. S.} and I. Adesida",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "20--21",

note = "Proceedings of the 1995 53rd Annual Device Research Conference Digest ; Conference date: 19-06-1995 Through 21-06-1995",

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T1 - High performance submicron-gate SiGe P-type modulation-doped field-effect transistors

AU - Arafa, M.

AU - Fay, P.

AU - Ismail, K.

AU - Chu, J. O.

AU - Meyerson, B. S.

AU - Adesida, I.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.

AB - This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.

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T2 - Proceedings of the 1995 53rd Annual Device Research Conference Digest

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