High performance submicron-gate SiGe P-type modulation-doped field-effect transistors

M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S. Meyerson, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages20-21
Number of pages2
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA
Duration: Jun 19 1995Jun 21 1995

Other

OtherProceedings of the 1995 53rd Annual Device Research Conference Digest
CityCharlottesville, VA, USA
Period6/19/956/21/95

Fingerprint

High electron mobility transistors
Heterojunctions
Cutoff frequency
Transconductance
Ultrahigh vacuum
Chemical vapor deposition
Fabrication
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Arafa, M., Fay, P., Ismail, K., Chu, J. O., Meyerson, B. S., & Adesida, I. (1995). High performance submicron-gate SiGe P-type modulation-doped field-effect transistors. In Annual Device Research Conference Digest (pp. 20-21). IEEE.

High performance submicron-gate SiGe P-type modulation-doped field-effect transistors. / Arafa, M.; Fay, P.; Ismail, K.; Chu, J. O.; Meyerson, B. S.; Adesida, I.

Annual Device Research Conference Digest. IEEE, 1995. p. 20-21.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arafa, M, Fay, P, Ismail, K, Chu, JO, Meyerson, BS & Adesida, I 1995, High performance submicron-gate SiGe P-type modulation-doped field-effect transistors. in Annual Device Research Conference Digest. IEEE, pp. 20-21, Proceedings of the 1995 53rd Annual Device Research Conference Digest, Charlottesville, VA, USA, 6/19/95.
Arafa M, Fay P, Ismail K, Chu JO, Meyerson BS, Adesida I. High performance submicron-gate SiGe P-type modulation-doped field-effect transistors. In Annual Device Research Conference Digest. IEEE. 1995. p. 20-21
Arafa, M. ; Fay, P. ; Ismail, K. ; Chu, J. O. ; Meyerson, B. S. ; Adesida, I. / High performance submicron-gate SiGe P-type modulation-doped field-effect transistors. Annual Device Research Conference Digest. IEEE, 1995. pp. 20-21
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abstract = "This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.",
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