Abstract
This paper reports the fabrication and characterization of p-type modulation-doped field effect transistors (MODFETs) in high mobility SiGe heterostructures. High transconductance and unity current-gain cut-off frequency are demonstrated for submicron-gate MODFETs. The devices were fabricated on a heterostructure grown by ultra-high vacuum chemical vapor deposition on an n-substrate.
Original language | English |
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Pages | 20-21 |
Number of pages | 2 |
Publication status | Published - Dec 1 1995 |
Event | Proceedings of the 1995 53rd Annual Device Research Conference Digest - Charlottesville, VA, USA Duration: Jun 19 1995 → Jun 21 1995 |
Other
Other | Proceedings of the 1995 53rd Annual Device Research Conference Digest |
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City | Charlottesville, VA, USA |
Period | 6/19/95 → 6/21/95 |
ASJC Scopus subject areas
- Engineering(all)