The growth of the high-performance III-N electronic and optoelectronic devices using chemical vapor deposition technique was discussed. It was observed that adding indium in the channel of the AlGan/GaN HEMT structures can lead to more stable operation at high microwave powers with low power collapse. It was also observed that application of -1 volt bias resulted in an enhancement of the negative photoresponse below 300nm and reduction of the positive component of the photocurrent. It was suggested that growth conditions need to be adjusted to achieve comparable film quality of In-doped AlGaN/GaN HEMT structures.
|Number of pages||3|
|Publication status||Published - Dec 1 2003|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: Oct 12 2003 → Oct 17 2003
|Other||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||10/12/03 → 10/17/03|
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