High performance wide-bandgap photonic and electronic devices grown by MBE

A. M. Dabiran, A. Osinsky, B. Hertog, M. Z. Kauser, P. P. Chow, V. Kumar, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of the high-performance III-N electronic and optoelectronic devices using chemical vapor deposition technique was discussed. It was observed that adding indium in the channel of the AlGan/GaN HEMT structures can lead to more stable operation at high microwave powers with low power collapse. It was also observed that application of -1 volt bias resulted in an enhancement of the negative photoresponse below 300nm and reduction of the positive component of the photocurrent. It was suggested that growth conditions need to be adjusted to achieve comparable film quality of In-doped AlGaN/GaN HEMT structures.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
EditorsR.F. Kopt, A.G. Baca, S.J. Pearton, F. Ren
Pages179-181
Number of pages3
Volume11
Publication statusPublished - 2003
Externally publishedYes
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period10/12/0310/17/03

Fingerprint

High electron mobility transistors
Molecular beam epitaxy
Photonics
Energy gap
Photocurrents
Optoelectronic devices
Indium
Chemical vapor deposition
Microwaves

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Dabiran, A. M., Osinsky, A., Hertog, B., Kauser, M. Z., Chow, P. P., Kumar, V., & Adesida, I. (2003). High performance wide-bandgap photonic and electronic devices grown by MBE. In R. F. Kopt, A. G. Baca, S. J. Pearton, & F. Ren (Eds.), State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium (Vol. 11, pp. 179-181)

High performance wide-bandgap photonic and electronic devices grown by MBE. / Dabiran, A. M.; Osinsky, A.; Hertog, B.; Kauser, M. Z.; Chow, P. P.; Kumar, V.; Adesida, I.

State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium. ed. / R.F. Kopt; A.G. Baca; S.J. Pearton; F. Ren. Vol. 11 2003. p. 179-181.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Dabiran, AM, Osinsky, A, Hertog, B, Kauser, MZ, Chow, PP, Kumar, V & Adesida, I 2003, High performance wide-bandgap photonic and electronic devices grown by MBE. in RF Kopt, AG Baca, SJ Pearton & F Ren (eds), State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium. vol. 11, pp. 179-181, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 10/12/03.
Dabiran AM, Osinsky A, Hertog B, Kauser MZ, Chow PP, Kumar V et al. High performance wide-bandgap photonic and electronic devices grown by MBE. In Kopt RF, Baca AG, Pearton SJ, Ren F, editors, State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium. Vol. 11. 2003. p. 179-181
Dabiran, A. M. ; Osinsky, A. ; Hertog, B. ; Kauser, M. Z. ; Chow, P. P. ; Kumar, V. ; Adesida, I. / High performance wide-bandgap photonic and electronic devices grown by MBE. State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium. editor / R.F. Kopt ; A.G. Baca ; S.J. Pearton ; F. Ren. Vol. 11 2003. pp. 179-181
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