High power 0.25 μm gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

D. H. Youn, V. Kumar, J. H. Lee, R. Schwindt, W. J. Chang, J. Y. Hong, C. M. Jeon, S. B. Bae, M. R. Park, K. S. Lee, J. L. Lee, I. Adesida

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) with power density up to 4.2 W/mm, one of the highest values ever reported for 0.25 μm gate-length AlGaN/GaN HEMTs, were fabricated on sapphire substrates. The devices exhibited maximum drain current density as high as 1370 mA/mm, high transconductance up to 223 mS/mm, short-circuit current gain cutoff frequency (fT) of 67 GHz, and maximum frequency of oscillation (fmax) of 102 GHz.

Original languageEnglish
Pages (from-to)566-567
Number of pages2
JournalElectronics Letters
Volume39
Issue number6
DOIs
Publication statusPublished - Mar 20 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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