High power 0.25 μm gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

D. H. Youn, V. Kumar, J. H. Lee, R. Schwindt, W. J. Chang, J. Y. Hong, C. M. Jeon, S. B. Bae, M. R. Park, K. S. Lee, J. L. Lee, I. Adesida

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Engineering & Materials Science