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High power 0.25 μm gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz
D. H. Youn, V. Kumar, J. H. Lee, R. Schwindt, W. J. Chang, J. Y. Hong, C. M. Jeon, S. B. Bae, M. R. Park, K. S. Lee, J. L. Lee, I. Adesida
Research output: Contribution to journal › Article › peer-review
14
Citations
(Scopus)