High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

Q. Chen, J. W. Yang, R. Gaska, M. Asif Khan, Michael S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgings, A. T. Ping, I. Adesida

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFET's). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors.

Original languageEnglish
Pages (from-to)44-46
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number2
DOIs
Publication statusPublished - Feb 1 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor'. Together they form a unique fingerprint.

  • Cite this

    Chen, Q., Yang, J. W., Gaska, R., Asif Khan, M., Shur, M. S., Sullivan, G. J., Sailor, A. L., Higgings, J. A., Ping, A. T., & Adesida, I. (1998). High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor. IEEE Electron Device Letters, 19(2), 44-46. https://doi.org/10.1109/55.658598