We report on the high-power performance of the 0.25-μm gate Doped-Channel GaN/AlGaN Heterostructure Field Effect Transistors (DC-HFET's). At a drain bias voltage of 18 V and drain bias current of 46 mA, these 100-μm wide devices exhibit high gain at 8.4 GHz with a power density reaching 1.73 W/mm. The devices also display high gain at moderate power over a wide range of frequencies. This high gain at high frequency is a result of an optimal doping level in the AlGaN layer that gives rise to a high sheet charge density while maintaining a high-channel electron mobility. These results demonstrate the excellent microwave power capability of the GaN/AlGaN based heterostructure field effect transistors.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering