High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

Jeong Woon Bae, Chang Hyun Jeong, Han Ki Kim, Kyoung Kook Kim, Nam Gil Cho, Tae Yeon Seong, Seong Ju Park, Ilesanmi Adesida, Geun Young Yeom

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
Publication statusPublished - May 15 2003
Externally publishedYes

Fingerprint

Dry etching
Bias voltage
Zinc oxide
etching
Aluminum
Plasmas
Inductively coupled plasma
zinc oxides
Flow rate
aluminum
plasma chemistry
profilometers
Scanning electron microscopy
electric potential
flow velocity
scanning electron microscopy
profiles

Keywords

  • AZO
  • BCl
  • Bias voltage
  • Etch profile
  • Inductively coupled plasma

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Bae, J. W., Jeong, C. H., Kim, H. K., Kim, K. K., Cho, N. G., Seong, T. Y., ... Yeom, G. Y. (2003). High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas. Japanese Journal of Applied Physics, Part 2: Letters, 42(5 B).

High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas. / Bae, Jeong Woon; Jeong, Chang Hyun; Kim, Han Ki; Kim, Kyoung Kook; Cho, Nam Gil; Seong, Tae Yeon; Park, Seong Ju; Adesida, Ilesanmi; Yeom, Geun Young.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 42, No. 5 B, 15.05.2003.

Research output: Contribution to journalArticle

Bae, JW, Jeong, CH, Kim, HK, Kim, KK, Cho, NG, Seong, TY, Park, SJ, Adesida, I & Yeom, GY 2003, 'High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas', Japanese Journal of Applied Physics, Part 2: Letters, vol. 42, no. 5 B.
Bae JW, Jeong CH, Kim HK, Kim KK, Cho NG, Seong TY et al. High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas. Japanese Journal of Applied Physics, Part 2: Letters. 2003 May 15;42(5 B).
Bae, Jeong Woon ; Jeong, Chang Hyun ; Kim, Han Ki ; Kim, Kyoung Kook ; Cho, Nam Gil ; Seong, Tae Yeon ; Park, Seong Ju ; Adesida, Ilesanmi ; Yeom, Geun Young. / High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas. In: Japanese Journal of Applied Physics, Part 2: Letters. 2003 ; Vol. 42, No. 5 B.
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