High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma

F. A. Khan, L. Zhou, V. Kumar, I. Adesida, R. Okojie

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


Inductively-coupled-plasma reactive ion etching of AlN was investigated using BCl3/Cl2/Ar gas chemistry. AlN etch rates were studied as a function of substrate bias voltage (-150 to -400 V), ICP coil power (200-900 W) and chamber pressure (2-10 mT). Using an electroplated Ni mask, up to 50 μm deep AlN structures were etched. This is the first demonstration of deep etching of AlN at high etch rates using inductively-coupled-plasma. The results reported in this study can be used for bulk micro-machining AlN substrates.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1
Publication statusPublished - Jul 1 2002


  • AlN
  • Etching

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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