High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

F. A. Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review

127 Citations (Scopus)

Abstract

Inductively coupled plasma (ICP) reactive ion etching of SiC was investigated using SF6 plasmas. Etch rates were studied as a function of substrate bias voltage (-3 to -500 V), ICP coil power (500-900 W), and chamber pressure (1-6 mT). The highest etch rate (970 nm/min) for SiC yet reported was achieved. Anisotropic etch profiles with highly smooth surfaces free of micromasking effects were obtained. The addition of O2 to the SF6 plasma was found to slightly increase the etch rate.

Original languageEnglish
Pages (from-to)2268-2270
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number15
DOIs
Publication statusPublished - Oct 11 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High rate etching of SiC using inductively coupled plasma reactive ion etching in SF<sub>6</sub>-based gas mixtures'. Together they form a unique fingerprint.

Cite this