Abstract
High-resolution X-ray diffraction (HRXRD) study of laser debonded AlGaN/GaN high electron mobility transistors (HEMTs), grown by metal-organic chemical vapor deposition (MOCVD), is performed. The lattice parameters as well as the in-plane and out-of-plane strains of the transistors before and after laser lift-off are determined from θ-2θ X-ray diffraction spectra. The biaxial strains of the laser debonded HEMTs in a- and c-directions compared with the non-debonded HEMTs are extracted from the measured strain. The results clearly indicate stress relaxation in the device after laser debonding. Additionally, the full-width at half-maximum (FWHM) of the X-ray rocking curves are compared before and after laser debonding. The results do not indicate any increase in the dislocation densities in the heterojunction after laser debonding. This corroborates with the studies on the I-V characteristics of the devices, which also indicate no degradation in the electronic properties after laser debonding.
| Original language | English |
|---|---|
| Pages (from-to) | 840-842 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 298 |
| Issue number | SPEC. ISS |
| DOIs | |
| Publication status | Published - Jan 1 2007 |
| Externally published | Yes |
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Keywords
- A1. High-resolution X-ray diffraction
- A3. Metal-organic chemical vapor deposition
- B1. Gallium compounds
- B1. Sapphire
- B2. Semiconducting III-V materials
- B3. High electron mobility transistors
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method. / Leung, K. K.; Chan, C. P.; Fong, W. K.; Pilkuhn, M.; Schweizer, H.; Surya, C.
In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.01.2007, p. 840-842.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method
AU - Leung, K. K.
AU - Chan, C. P.
AU - Fong, W. K.
AU - Pilkuhn, M.
AU - Schweizer, H.
AU - Surya, C.
PY - 2007/1/1
Y1 - 2007/1/1
N2 - High-resolution X-ray diffraction (HRXRD) study of laser debonded AlGaN/GaN high electron mobility transistors (HEMTs), grown by metal-organic chemical vapor deposition (MOCVD), is performed. The lattice parameters as well as the in-plane and out-of-plane strains of the transistors before and after laser lift-off are determined from θ-2θ X-ray diffraction spectra. The biaxial strains of the laser debonded HEMTs in a- and c-directions compared with the non-debonded HEMTs are extracted from the measured strain. The results clearly indicate stress relaxation in the device after laser debonding. Additionally, the full-width at half-maximum (FWHM) of the X-ray rocking curves are compared before and after laser debonding. The results do not indicate any increase in the dislocation densities in the heterojunction after laser debonding. This corroborates with the studies on the I-V characteristics of the devices, which also indicate no degradation in the electronic properties after laser debonding.
AB - High-resolution X-ray diffraction (HRXRD) study of laser debonded AlGaN/GaN high electron mobility transistors (HEMTs), grown by metal-organic chemical vapor deposition (MOCVD), is performed. The lattice parameters as well as the in-plane and out-of-plane strains of the transistors before and after laser lift-off are determined from θ-2θ X-ray diffraction spectra. The biaxial strains of the laser debonded HEMTs in a- and c-directions compared with the non-debonded HEMTs are extracted from the measured strain. The results clearly indicate stress relaxation in the device after laser debonding. Additionally, the full-width at half-maximum (FWHM) of the X-ray rocking curves are compared before and after laser debonding. The results do not indicate any increase in the dislocation densities in the heterojunction after laser debonding. This corroborates with the studies on the I-V characteristics of the devices, which also indicate no degradation in the electronic properties after laser debonding.
KW - A1. High-resolution X-ray diffraction
KW - A3. Metal-organic chemical vapor deposition
KW - B1. Gallium compounds
KW - B1. Sapphire
KW - B2. Semiconducting III-V materials
KW - B3. High electron mobility transistors
UR - http://www.scopus.com/inward/record.url?scp=33846413200&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846413200&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.10.112
DO - 10.1016/j.jcrysgro.2006.10.112
M3 - Article
AN - SCOPUS:33846413200
VL - 298
SP - 840
EP - 842
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -